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Yangtze Memory Technologies Co., Ltd.

USPTO Granted Patents = 1,164

EPO Patents = 156

Trademarks = 24

Forward Citations = 1,018

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705 inventors (with patents filed for the assignee):

Zhiliang Xia (165 out of 166 patents)

Wenxi Zhou (128 out of 128 patents)

Zongliang Huo (99 out of 100 patents)

4. Kun Zhang (87 out of 88 patents)

5. Li Hong Xiao (86 out of 90 patents)

6. Jun Liu (69 out of 73 patents)

7. Zhenyu Lu (65 out of 65 patents)

8. Zhong Zhang (61 out of 61 patents)

9. Wei Liu (59 out of 106 patents)

10. Jun Chen (56 out of 75 patents)

11. Liang Chen (45 out of 51 patents)

12. Yushi Hu (44 out of 44 patents)

13. Jifeng Zhu (41 out of 44 patents)

14. Qian Tao (40 out of 41 patents)

15. Hongbin Zhu (39 out of 39 patents)

Core Competencies:

Three-Dimensional Memory Devices

Vertical Memory Devices

NAND Memory Device

Semiconductor Fabrication

Hybrid Wafer Bonding

Electromagnetic Interference Shielding

Memory System Optimization

Charge Trap Layer Technology

Memory Programming Methods

Decoder and Memory Controller

Surface Topography Metrology

Retaining Error Reduction

1,164 patents: Sort by Forward Citations

1. 12513906 - Three-dimensional NAND memory device having word line contact with dielectric filler (2025-12-30),

2. 12513905 - Three-dimensional memory device and method of forming the same (2025-12-30),

3. 12512164 - Memory system and operation method thereof, and readable storage medium (2025-12-30),

4. 12512159 - Memory device and method for performing cache program on memory device (2025-12-30),

5. 12512145 - Non-volatile memory device and control method (2025-12-30),

6. 12511054 - Methods of operating memory controllers, devices and storage media (2025-12-30),

7. 12511052 - Memory devices and operation methods thereof, and memory systems for managing page buffer (2025-12-30),

8. 12507406 - 3D memory device (2025-12-23),

9. 12507404 - Three-dimensional memories having isolation structures and fabrication methods thereof (2025-12-23),

10. 12505893 - Memory device, operation method thereof, and readable storage medium (2025-12-23),

11. 12505887 - Discharge circuits for a NAND flash memory (2025-12-23),

12. 12505869 - Memory devices, operation methods thereof, and memory systems (2025-12-23),

13. 12505035 - Memory device and its operating method, memory system and operating method thereof (2025-12-23),

14. 12505034 - Memory system and operation method thereof (2025-12-23),

15. 12504922 - Method and apparatus for improving processing capabilities of a memory controller for error information (2025-12-23),

Yangtze Memory Technologies Co., Ltd. (YMTC) is a Chinese semiconductor company specializing in the development, production, and sale of NAND Flash memory chips. Established in 2016, YMTC aims to become a leading global provider of memory storage solutions. With state-of-the-art research facilities and manufacturing plants, YMTC focuses on technological innovation and product quality to meet the ever-growing demand for data storage in various industries. Visit their website to learn more about YMTC's cutting-edge memory technologies.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

1,164 Patents

#1 in Wuhan

#28 in China

#851 in the World

Yangtze Memory Technologies Co., Ltd.

Forward Citations = 1,018

705 inventors:

Zhiliang Xia (165 out of 166 patents)

Wenxi Zhou (128 out of 128 patents)

Zongliang Huo (99 out of 100 patents)

4. Kun Zhang (87 out of 88 patents)

5. Li Hong Xiao (86 out of 90 patents)

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