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Yangtze Memory Technologies Co., Ltd.

USPTO Granted Patents = 1,190

EPO Patents = 157

Trademarks = 23

Forward Citations = 1,260

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714 inventors (with patents filed for the assignee):

Zhiliang Xia (173 out of 200 patents)

Wenxi Zhou (134 out of 159 patents)

Zongliang Huo (103 out of 137 patents)

4. Kun Zhang (94 out of 110 patents)

5. Li Hong Xiao (86 out of 91 patents)

6. Jun Liu (69 out of 74 patents)

7. Zhenyu Lu (65 out of 66 patents)

8. Zhong Zhang (63 out of 69 patents)

9. Wei Liu (60 out of 123 patents)

10. Jun Chen (56 out of 75 patents)

11. Liang Chen (46 out of 57 patents)

12. Yushi Hu (44 out of 45 patents)

13. Jifeng Zhu (41 out of 44 patents)

14. Qian Tao (40 out of 42 patents)

15. Hongbin Zhu (39 out of 45 patents)

Core Competencies:

Three-Dimensional Memory

NAND Flash Technology

Memory Device

Semiconductor Fabrication

Voltage Calibration

Memory System

Error Management

Layered Structures

Memory Controller

Operation Method

Stack Structures

Vertical Transistors

1,190 patents: Sort by Forward Citations

1. 12526999 - Three-dimensional memory device and fabrication method thereof (2026-01-13),

2. 12526996 - Three-dimensional memory devices (2026-01-13),

3. 12526993 - Methods for fabricating a layered semiconductor structure for NAND memory devices (2026-01-13),

4. 12525558 - Three-dimensional memory devices and methods for forming the same (2026-01-13),

5. 12525309 - Memory system and an operating method thereof (2026-01-13),

6. 12525293 - Three-dimensional memory devices and methods for forming the same (2026-01-13),

7. 12525276 - Memory device and memory system for performing resistor offset calibration training (2026-01-13),

8. 12525263 - Method of voltage calibration and apparatus thereof, memory and memory system (2026-01-13),

9. 12524165 - Soft decoding in memory systems (2026-01-13),

10. 12524164 - Memory device, memory system and operation method thereof, and electronic apparatus (2026-01-13),

11. 12520494 - Three-dimensional memory device, manufacturing method thereof, and memory system (2026-01-06),

12. 12520488 - Three-dimensional memory device and fabrication method for improved yield and reliability (2026-01-06),

13. 12520486 - Memory devices and methods for forming the same (2026-01-06),

14. 12520485 - Three-dimensional memory devices and fabricating methods thereof (2026-01-06),

15. 12519038 - Semiconductor device including a memory stack and a contact structure in a spacer structure (2026-01-06),

Company Overview

Yangtze Memory Technologies Co., Ltd. is a leading semiconductor manufacturer based in Wuhan, China, specializing in advanced three-dimensional memory solutions. The company focuses on the development and production of NAND flash technology, which is pivotal for a variety of memory devices and systems. Their expertise encompasses semiconductor fabrication, voltage calibration, and error management, with an emphasis on innovative layered structures that enhance memory performance and reliability in diverse applications.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

1,190 Patents

#3 in Wuhan

#29 in China

#866 in the World

Yangtze Memory Technologies Co., Ltd.

Forward Citations = 1,260

714 inventors:

Zhiliang Xia (173 out of 200 patents)

Wenxi Zhou (134 out of 159 patents)

Zongliang Huo (103 out of 137 patents)

4. Kun Zhang (94 out of 110 patents)

5. Li Hong Xiao (86 out of 91 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Yangtze Memory Technologies Co., Ltd.. Retrieved from https://idiyas.com/company/yangtze-memory-technologies-company

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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