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Yangtze Memory Technologies Co., Ltd.

USPTO Granted Patents = 1,174

EPO Patents = 157

Trademarks = 24

Forward Citations = 1,022

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710 inventors (with patents filed for the assignee):

Zhiliang Xia (170 out of 170 patents)

Wenxi Zhou (131 out of 131 patents)

Zongliang Huo (102 out of 102 patents)

4. Kun Zhang (91 out of 92 patents)

5. Li Hong Xiao (86 out of 90 patents)

6. Jun Liu (69 out of 73 patents)

7. Zhenyu Lu (65 out of 65 patents)

8. Zhong Zhang (62 out of 62 patents)

9. Wei Liu (59 out of 106 patents)

10. Jun Chen (56 out of 75 patents)

11. Liang Chen (45 out of 51 patents)

12. Yushi Hu (44 out of 44 patents)

13. Jifeng Zhu (41 out of 44 patents)

14. Qian Tao (40 out of 41 patents)

15. Hongbin Zhu (39 out of 39 patents)

Core Competencies:

Three-Dimensional Memory Devices

Vertical Memory Devices

NAND Memory Device

Semiconductor Fabrication

Hybrid Wafer Bonding

Electromagnetic Interference Shielding

Memory System Optimization

Charge Trap Layer Technology

Memory Programming Methods

Decoder and Memory Controller

Surface Topography Metrology

Retaining Error Reduction

1,174 patents: Sort by Forward Citations

1. 12520494 - Three-dimensional memory device, manufacturing method thereof, and memory system (2026-01-06),

2. 12520488 - Three-dimensional memory device and fabrication method for improved yield and reliability (2026-01-06),

3. 12520486 - Memory devices and methods for forming the same (2026-01-06),

4. 12520485 - Three-dimensional memory devices and fabricating methods thereof (2026-01-06),

5. 12519038 - Semiconductor device including a memory stack and a contact structure in a spacer structure (2026-01-06),

6. 12519012 - Semiconductor structure and manufacturing method thereof (2026-01-06),

7. 12518849 - Test device, test method, and test machine (2026-01-06),

8. 12518836 - Memory device having multiple subblocks, operating method thereof, and memory system (2026-01-06),

9. 12518825 - High voltage switches for NAND flash memory (2026-01-06),

10. 12517670 - Methods for controlling memory blocks in memory devices (2026-01-06),

11. 12513906 - Three-dimensional NAND memory device having word line contact with dielectric filler (2025-12-30),

12. 12513905 - Three-dimensional memory device and method of forming the same (2025-12-30),

13. 12512164 - Memory system and operation method thereof, and readable storage medium (2025-12-30),

14. 12512159 - Memory device and method for performing cache program on memory device (2025-12-30),

15. 12512145 - Non-volatile memory device and control method (2025-12-30),

Yangtze Memory Technologies Co., Ltd. (YMTC) is a Chinese semiconductor company specializing in the development, production, and sale of NAND Flash memory chips. Established in 2016, YMTC aims to become a leading global provider of memory storage solutions. With state-of-the-art research facilities and manufacturing plants, YMTC focuses on technological innovation and product quality to meet the ever-growing demand for data storage in various industries. Visit their website to learn more about YMTC's cutting-edge memory technologies.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Jan 6 2026

1,174 Patents

#1 in Wuhan

#27 in China

#843 in the World

Yangtze Memory Technologies Co., Ltd.

Forward Citations = 1,022

710 inventors:

Zhiliang Xia (170 out of 170 patents)

Wenxi Zhou (131 out of 131 patents)

Zongliang Huo (102 out of 102 patents)

4. Kun Zhang (91 out of 92 patents)

5. Li Hong Xiao (86 out of 90 patents)

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