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Yangtze Memory Technologies Co., Ltd.

USPTO Granted Patents = 1,143

EPO Patents = 150

Trademarks = 25

Forward Citations = 983

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685 inventors (with patents filed for the assignee):

Zhiliang Xia (161 out of 162 patents)

Wenxi Zhou (126 out of 126 patents)

Zongliang Huo (97 out of 98 patents)

4. Li Hong Xiao (86 out of 90 patents)

5. Kun Zhang (84 out of 86 patents)

6. Jun Liu (69 out of 73 patents)

7. Zhenyu Lu (65 out of 65 patents)

8. Zhong Zhang (60 out of 60 patents)

9. Wei Liu (59 out of 106 patents)

10. Jun Chen (56 out of 75 patents)

11. Liang Chen (45 out of 51 patents)

12. Yushi Hu (44 out of 44 patents)

13. Jifeng Zhu (41 out of 44 patents)

14. Qian Tao (40 out of 41 patents)

15. Hongbin Zhu (39 out of 39 patents)

Core Competencies:

Three-Dimensional Memory Devices

Vertical Memory Devices

NAND Memory Device

Semiconductor Fabrication

Hybrid Wafer Bonding

Electromagnetic Interference Shielding

Memory System Optimization

Charge Trap Layer Technology

Memory Programming Methods

Decoder and Memory Controller

Surface Topography Metrology

Retaining Error Reduction

1,143 patents: Sort by Forward Citations

1. 12495555 - Method and structure for forming stairs in three-dimensional memory devices (2025-12-09),

2. 12494259 - Erase operations in memory devices (2025-12-09),

3. 12494252 - Memory with separate drivers for word lines and select gates (2025-12-09),

4. 12493528 - Memory system, operation method of memory system, and memory controller (2025-12-09),

5. 12490440 - Three-dimensional memory devices and fabricating methods thereof (2025-12-02),

6. 12490434 - Memory device (2025-12-02),

7. 12490432 - Method of fabricating a semiconductor device using laser annealing (2025-12-02),

8. 12490430 - Three-dimensional memory devices and methods for forming the same (2025-12-02),

9. 12489066 - Electromagnetic interference shielding package structures and fabricating methods thereof (2025-12-02),

10. 12489059 - Vertical memory devices and method of fabrication thereof (2025-12-02),

11. 12489034 - Contact structure and method of forming the same (2025-12-02),

12. 12487919 - Electronic device and operation method thereof, and system (2025-12-02),

13. 12484226 - Three-dimensional NAND memory device and method that eliminate leakage currents and short circuits (2025-11-25),

14. 12484220 - Three-dimensional memory and fabrication method thereof (2025-11-25),

15. 12484219 - Three-dimensional NAND memory device and method of forming the same (2025-11-25),

Yangtze Memory Technologies Co., Ltd. (YMTC) is a Chinese semiconductor company specializing in the development, production, and sale of NAND Flash memory chips. Established in 2016, YMTC aims to become a leading global provider of memory storage solutions. With state-of-the-art research facilities and manufacturing plants, YMTC focuses on technological innovation and product quality to meet the ever-growing demand for data storage in various industries. Visit their website to learn more about YMTC's cutting-edge memory technologies.

This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Dec 9 2025

1,143 Patents

#1 in Wuhan

#28 in China

#871 in the World

Yangtze Memory Technologies Co., Ltd.

Forward Citations = 983

685 inventors:

Zhiliang Xia (161 out of 162 patents)

Wenxi Zhou (126 out of 126 patents)

Zongliang Huo (97 out of 98 patents)

4. Li Hong Xiao (86 out of 90 patents)

5. Kun Zhang (84 out of 86 patents)

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