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Li Hong Xiao

USPTO Granted Patents = 90 (Patent Applications = 12)

EPO Patents = 10 (Patent Applications = 12)

Average Co-Inventor Count = 2.1

ph-index = 7

Forward Citations = 211(Granted Patents)

Forward Citations (Not Self Cited) = 169(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hubei, CN (2019 - 2024)
Wuhan, CN (2019 - 2024)

Company Filing History:

86 out of 1,164

Yangtze Memory Technologies Co., Ltd.

Accelink Technologies Co., Ltd.

Cornell University

4. 1 out of 263

Wuhan University

where one patent can have more than one assignee

Years Active: 2019-2025

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Areas of Expertise:

3D NAND Memory Device

Three-Dimensional Memory Devices

Memory Stacks

Silicon Nitride Dielectric Layers

Channel Hole Plug Formation

Optical Communication Systems

Remote Optical Fiber Compensation

Multi-Stack Memory Devices

Staircase Structure

Bonded Semiconductor Structures

Comb-Like Routing Structure

Manganese-Cobalt Spinel Oxide Catalyst

90 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12308948 - Communication station, optical communication system, data transmission method, and storage medium (2025-05-20),

2. 12262539 - 3D NAND memory device and method of forming the same (2025-03-25),

3. 12219773 - Embedded pad structures of three-dimensional memory devices and fabrication methods thereof (2025-02-04),

4. 12137558 - Staircase structure for memory device (2024-11-05),

5. 12010838 - Staircase structure for memory device (2024-06-11),

6. 11968832 - Multiple-stack three-dimensional memory device and fabrication method thereof (2024-04-23),

7. 11943928 - Method for forming channel hole plug of three-dimensional memory device (2024-03-26),

8. 11943923 - Three-dimensional memory devices and fabrication methods thereof (2024-03-26),

9. 11889686 - Vertical memory devices (2024-01-30),

10. 11856776 - Structure of 3D NAND memory device and method of forming the same (2023-12-26),

11. 11849582 - Memory stacks having silicon nitride gate-to-gate dielectric layers and methods for forming the same (2023-12-19),

12. 11844216 - Three-dimensional memory devices and fabricating methods thereof (2023-12-12),

13. 11825656 - 3D NAND memory device and method of forming the same (2023-11-21),

14. 11800710 - Three-dimensional memory devices and fabricating methods thereof (2023-10-24),

15. 11758731 - Three-dimensional memory device having a shielding layer and method for forming the same (2023-09-12),

Title: Inventor Li Hong Xiao: Revolutionizing Technology in Hubei, China

Introduction: Li Hong Xiao is a pioneering inventor based in Hubei, China, known for her groundbreaking contributions to the field of technology.

Latest Patents: Li Hong Xiao holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing her diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Li Hong Xiao has worked with leading research institutions and universities to develop cutting-edge technologies that have had a significant impact on various industries.

Collaborations: Throughout her career, Li Hong Xiao has collaborated with multinational companies, innovative startups, and renowned scientists to bring her inventions to life and make a lasting impression on the world of technology.

Conclusion: Li Hong Xiao's relentless pursuit of innovation and her passion for pushing the boundaries of technology make her a true trailblazer in the field of inventions, inspiring future generations of inventors to dream big and create change.

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