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For the Inventor, By the Inventor

Hubei, China

Li Hong Xiao

This inventor holds 91 USPTO granted patents and 12 published patent applications and 10 EPO patents, primarily in 3D NAND Memory (CPC class H01L27-11582). Top assignees: Yangtze Memory Technologies Co., Ltd., Accelink Technologies Co., Ltd., Cornell University. Active years: 2019-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Li Hong Xiao. Retrieved from https://idiyas.com/inventor/li-hong-xiao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 91 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.1

ph-index = 7

Forward Citations = 226(Granted Patents)

Forward Citations (Not Self Cited) = 169(Dec 10, 2025)


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Location History:

  • Hubei, CN (2019 - 2024)
  • Wuhan, CN (2019 - 2024)

Company Filing History:

goldMedal86 out of 1,190 
 
Yangtze Memory Technologies Co., Ltd.
 patents
silverMedal4 out of 73 
 
Accelink Technologies Co., Ltd.
 patents
bronzeMedal1 out of 2,953 
 
Cornell University
 patents
4. 1 out of 172 
 
Wuhan University
 patents
where one patent can have more than one assignee

Years Active: 2019-2025

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Areas of Expertise:
3D NAND Memory
Memory Device
Optical Communication
Data Transmission
Fabrication Methods
Silicon Nitride
Channel Hole Plug
Memory Stacks
Vertical Memory
Embedded Pad Structures
Multi-Stack Devices
Comb-Like Routing
91 patents (USPTO):Explore Patents
1. 12323229 - Device, apparatus, and method for adjusting optical signals, and storage medium (2025-06-03),
2. 12308948 - Communication station, optical communication system, data transmission method, and storage medium (2025-05-20),
3. 12262539 - 3D NAND memory device and method of forming the same (2025-03-25),
4. 12219773 - Embedded pad structures of three-dimensional memory devices and fabrication methods thereof (2025-02-04),
5. 12137558 - Staircase structure for memory device (2024-11-05),
6. 12010838 - Staircase structure for memory device (2024-06-11),
7. 11968832 - Multiple-stack three-dimensional memory device and fabrication method thereof (2024-04-23),
8. 11943928 - Method for forming channel hole plug of three-dimensional memory device (2024-03-26),
9. 11943923 - Three-dimensional memory devices and fabrication methods thereof (2024-03-26),
10. 11889686 - Vertical memory devices (2024-01-30),
11. 11856776 - Structure of 3D NAND memory device and method of forming the same (2023-12-26),
12. 11849582 - Memory stacks having silicon nitride gate-to-gate dielectric layers and methods for forming the same (2023-12-19),
13. 11844216 - Three-dimensional memory devices and fabricating methods thereof (2023-12-12),
14. 11825656 - 3D NAND memory device and method of forming the same (2023-11-21),
15. 11800710 - Three-dimensional memory devices and fabricating methods thereof (2023-10-24),

Title: Inventor Li Hong Xiao: Revolutionizing Technology in Hubei, China

Introduction: Li Hong Xiao is a pioneering inventor based in Hubei, China, known for her groundbreaking contributions to the field of technology.

Latest Patents: Li Hong Xiao holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing her diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Li Hong Xiao has worked with leading research institutions and universities to develop cutting-edge technologies that have had a significant impact on various industries.

Collaborations: Throughout her career, Li Hong Xiao has collaborated with multinational companies, innovative startups, and renowned scientists to bring her inventions to life and make a lasting impression on the world of technology.

Conclusion: Li Hong Xiao's relentless pursuit of innovation and her passion for pushing the boundaries of technology make her a true trailblazer in the field of inventions, inspiring future generations of inventors to dream big and create change.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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