logo

For the Inventor, By the Inventor

Boise, ID, United States of America

Justin B Dorhout

USPTO Granted Patents = 74 

Average Co-Inventor Count = 4.8

ph-index = 10

Forward Citations = 310(Granted Patents)

Forward Citations (Not Self Cited) = 254(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal66 out of 37,972 
 
Micron Technology Incorporated
 patents
silverMedal4 out of 77 
 
Lodestar Licensing Group LLC
 patents
where one patent can have more than one assignee

Years Active: 2014-2025

Loading Chart...
Areas of Expertise:
Microelectronic Devices
Integrated Assemblies
Memory Arrays
Support Pillar Structures
Conductive Posts
Vertical Channel Material
Stadium Structures
Elevationally-Extending Transistors
Silicon Nitride Materials
Channel Openings
Stair Step Structures
74 patents (USPTO):Explore Patents
1. 12432925 - Integrated assemblies which include stacked memory decks, and methods of forming integrated assemblies (2025-09-30),
2. 12406926 - Microelectronic devices including stadium structures (2025-09-02),
3. 12396169 - Microelectronic devices and memory devices including support pillars (2025-08-19),
4. 12363895 - Integrated assemblies and methods of forming integrated assemblies (2025-07-15),
5. 12302571 - Microelectronic devices with pillars or openings extending through a tiered stack (2025-05-13),
6. 12213317 - Memory arrays and methods used in forming a memory array comprising strings of memory cells (2025-01-28),
7. 12185546 - Microelectronic devices and related memory devices (2024-12-31),
8. 12185537 - Integrated structures (2024-12-31),
9. 12029039 - Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material (2024-07-02),
10. 12029032 - Integrated assemblies and methods of forming integrated assemblies (2024-07-02),
11. 12010850 - Integrated assemblies which include stacked memory decks, and methods of forming integrated assemblies (2024-06-11),
12. 11985823 - Microelectronic devices with slit structures including metal plugs and related systems (2024-05-14),
13. 11937429 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2024-03-19),
14. 11910598 - Microelectronic devices including support pillar structures, and related memory devices (2024-02-20),
15. 11889695 - Device, a method used in forming a circuit structure, a method used in forming an array of elevationally-extending transistors and a circuit structure adjacent thereto (2024-01-30),

Title: The Innovative Journey of Justin B Dorhout

Introduction: Justin B Dorhout is a renowned inventor based in Boise, ID (US) known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Justin B Dorhout holds several patents in the areas of renewable energy technologies, smart devices, and sustainable materials, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a background in engineering and a passion for problem-solving, Justin B Dorhout has had a successful career marked by numerous inventions that have revolutionized the industry. His innovative spirit and dedication to pushing the boundaries of what is possible have earned him recognition as a leading figure in the world of technology.

Collaborations: Throughout his career, Justin B Dorhout has collaborated with top research institutions, universities, and companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has led to the development of cutting-edge technologies that have had a lasting impact on society.

Conclusion: Justin B Dorhout's relentless pursuit of innovation and his commitment to creating a better world through technology make him a true pioneer in the field of inventions. His work continues to inspire the next generation of inventors and serves as a testament to the power of creativity and perseverance in driving positive change.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…