This inventor holds 103 USPTO granted patents and 14 published patent applications, primarily in Trench MOSFET Technology (CPC class H01L29-7813). Top assignees: Force Mos Technology Co., Ltd., Nami Mos Co, Ltd, Feei Cherng Enterprise Co., Ltd.. Active years: 2009-2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Inventors with similar research interests:
Location History:
- Sanchong City, Taipei County, TW (2011)
- HsinChu, TW (2009 - 2012)
- Hsingchu, TW (2009 - 2012)
- Kaohsiung, TW (2010 - 2013)
- Banciao, TW (2011 - 2014)
- New Taipei, TW (2012 - 2023)
Company Filing History:
83 out of 88 
17 out of 17 
1 out of 2 Years Active: 2009-2025
Areas of Expertise:
Title: Fu-Yuan Hsieh: Innovator in Shielded Gate Trench MOSFET Technology
Introduction: Fu-Yuan Hsieh is a prominent inventor based in New Taipei, Taiwan, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 101 patents, Hsieh has established himself as a leading figure in innovation, particularly in the development of shielded gate trench MOSFETs.
Latest Patents: Hsieh's latest patents include groundbreaking technologies designed to enhance the performance and reliability of MOSFET devices. One of his recent inventions focuses on shielded gate trench MOSFETs with improved trench terminations and shielded gate contacts. This innovation comprises a structure where termination trenches surround the outer periphery of gate trenches, providing superior breakdown voltage performance by integrating shielded gate electrodes connected to source metals through strategically placed trench contacts. Another significant development is the introduction of shielded gate trench MOSFETs featuring improved performance structures, which integrate an active area and an edge termination designed with multiple stepped epitaxial layers and specialized trench field plates to reduce specific on-resistance and enhance ruggedness under operational stress.
Career Highlights: Throughout his career, Fu-Yuan Hsieh has worked with renowned companies in the semiconductor industry, including Force MOS Technology Co., Ltd. and Nami MOS Co., Ltd. His expertise and innovative approach have paved the way for advancements in semiconductor technologies, affirming his position as a leading inventor in this dynamic field.
Collaborations: Hsieh has collaborated with esteemed colleagues such as Ming-Tao Chung, further enhancing his endeavors in the development of novel semiconductor solutions. These partnerships have been instrumental in fostering innovation and driving the success of his patented technologies.
Conclusion: Fu-Yuan Hsieh's relentless pursuit of innovation in the realm of shielded gate trench MOSFETs exemplifies his dedication to advancing semiconductor technology. His extensive patent portfolio and collaborations with industry leaders underscore the impact of his work, ensuring that his contributions will continue to shape the future of the semiconductor industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile