The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Jun. 10, 2022
Applicant:
Nami Mos Co., Ltd., New Taipei, TW;
Inventor:
Fu-Yuan Hsieh, New Taipei, TW;
Assignee:
NAMI MOS CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/665 (2025.01); H10D 30/668 (2025.01); H10D 62/112 (2025.01); H10D 62/393 (2025.01); H10D 64/117 (2025.01);
Abstract
Shielded gate trench MOSFETs with gate trenches separated from termination trenches are disclosed, wherein at least one termination trench surrounds outer periphery of gate trenches and does not surround the gate metal pad area. The shielded gate electrode inside each of the gate trenches is connected to a source metal through at least one shielded gate trench contact which is spaced apart from at least one gate metal runner with a distance larger than 100 um. A breakdown voltage enhancement region and an avalanche capability enhancement region in the device structures are also disclosed.