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Nami Mos Co, Ltd

USPTO Granted Patents = 17

Forward Citations = 4

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1 inventor (with patents filed for the assignee):

Fu-Yuan Hsieh (17 out of 103 patents)

17 patents: Sort by Forward Citations

1. 12432966 - Shielded gate trench MOSFETs with improved termination structures (2025-09-30),

2. 12328915 - Superfunction MOSFETs having shielded gate trench structures (2025-06-10),

3. 12268017 - Shielded gate trench MOSFETs with improved trench terminations and shielded gate trench contacts (2025-04-01),

4. 12266726 - Shielded gate trench MOSFETs with improved performance structures (2025-04-01),

5. 12230705 - Shielded gate trench MOSFETs with improved trench terminations and shielded gate trench contacts (2025-02-18),

6. 12176397 - Super barrier rectifier with shielded gate electrode and multiple stepped epitaxial structure (2024-12-24),

7. 11777000 - SiC trench MOSFET with low on-resistance and switching loss (2023-10-03),

8. 11600725 - Trench MOSFETs integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradation (2023-03-07),

9. 11515303 - Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers process (2022-11-29),

10. 11462638 - SiC super junction trench MOSFET (2022-10-04),

11. 11444164 - Shielded gate trench MOSFET having improved specific on-resistance structures (2022-09-13),

12. 11380787 - Shielded gate trench MOSFET integrated with super barrier rectifier having short channel (2022-07-05),

13. 11329155 - Trench MOSFETs integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradation (2022-05-10),

14. 11114558 - Shielded gate trench MOSFET integrated with super barrier rectifier (2021-09-07),

15. 11018127 - Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers process (2021-05-25),

Company Overview

Nami Mos Co, Ltd is a Taipei-based company specializing in the development and manufacturing of advanced electronic components and systems. The organization focuses on innovative solutions in the fields of consumer electronics and telecommunications, emphasizing quality and performance. With a commitment to research and development, Nami Mos aims to enhance connectivity and user experience through its cutting-edge technologies, catering to both local and international markets.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

17 Patents

#231 in Taipei

#940 in Taiwan

#35,948 in the World

Nami Mos Co, Ltd

Forward Citations = 4

1 inventor:

Fu-Yuan Hsieh (17 out of 103 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Nami Mos Co, Ltd. Retrieved from https://idiyas.com/company/nami-mos-company

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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