The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Nov. 09, 2020
Applicant:
Nami Mos Co., Ltd., New Taipei, TW;
Inventor:
Fu-Yuan Hsieh, New Taipei, TW;
Assignee:
NAMI MOS CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 29/0623 (2013.01); H01L 29/0634 (2013.01); H01L 29/1095 (2013.01); H01L 29/42364 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract
A SGT MOSFET having two stepped oxide (TSO) structure in gate trench is disclosed, wherein the TSO has thinner oxide thickness along upper sidewalls of the gate trench than along lower sidewalls of the gate trench. The BV can be enhanced as result of the electric filed reduction near channel region, on-resistance is thus reduced. The present invention further comprises a super junction region below the oxide charge balance region, making vertical electrical field more uniform, the BV is further enhanced and on-resistance is further reduced.