The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Mar. 12, 2021
Applicant:
Nami Mos Co., Ltd., New Taipei, TW;
Inventor:
Fu-Yuan Hsieh, New Taipei, TW;
Assignee:
NAMI MOS CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7808 (2013.01); H01L 29/7813 (2013.01);
Abstract
A SGT MOSFET having ESD diode and a method of manufacturing the same are disclosed. The SGT trench MOSFET according to the present invention, has n+ doped shielded electrode in an N channel device and requires only two poly-silicon layers, making the device can be shrunk with reducing shielded gate width for Rds reduction without increasing switching loss and having dynamic switching instability.