The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
Apr. 08, 2022
Applicant:
Nami Mos Co., Ltd., New Taipei, TW;
Inventor:
Fu-Yuan Hsieh, New Taipei, TW;
Assignee:
NAMI MOS CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01); H01L 29/866 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7823 (2013.01); H01L 27/0255 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/4916 (2013.01); H01L 29/7821 (2013.01); H01L 29/7825 (2013.01); H01L 29/866 (2013.01);
Abstract
A semiconductor power device having shielded gate structure in an active area and trench field plate termination surrounding the active area is disclosed. A Zener diode connected between drain metal and source metal or gate metal for functioning as a SD or GD clamp diode. Trench field plate termination surrounding active area wherein only cell array located will not cause BV degradation when SD or GD poly clamped diode integrated.