The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Oct. 12, 2022
Nami Mos Co., Ltd., New Taipei, TW;
Fu-Yuan Hsieh, New Taipei, TW;
NAMI MOS CO., LTD., New Taipei, TW;
Abstract
Shielded gate trench MOSFETs with gate trenches separated from termination trenches are disclosed, wherein a first type body regions are formed in an active area and an first type electric field reducing regions formed adjacent to an intersection regions between a first termination trench and trench ends of gate trenches; The first type electric field reducing regions formed between the first type body regions and the first termination trench wherein the first type body regions are absent to enhance breakdown voltage. At least one second type body region of the second conductivity type with a floating voltage is formed within the first type field reducing regions, and is spaced apart from the first type body regions and the first termination trench for further increasing breakdown voltage.