The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Oct. 19, 2020
Nami Mos Co., Ltd., New Taipei, TW;
Fu-Yuan Hsieh, New Taipei, TW;
NAMI MOS CO., LTD., New Taipei, TW;
Abstract
A SiC SJ trench MOSFET having first and second type gate trenches for formation of gate electrodes and super junction regions is disclosed. The gate electrodes are disposed into the first type gate trenches having a thick oxide layer on trench bottom. The super junction regions are formed surrounding the second type gate trenches filled up with the thick oxide layer. The device further comprises gate oxide electric field reducing regions adjoining lower surfaces of body regions and space apart from the gate trenches.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile