The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Jul. 19, 2022
Applicant:
Nami Mos Co., Ltd., New Taipei, TW;
Inventor:
Fu-Yuan Hsieh, New Taipei, TW;
Assignee:
NAMI MOS CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01); H10D 62/13 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 62/111 (2025.01); H10D 30/0297 (2025.01); H10D 30/668 (2025.01); H10D 62/157 (2025.01); H10D 64/513 (2025.01);
Abstract
The present invention introduces new shielded gate trench (SGT) superjunction (SJ) MOSFETs having a first type multiple stepped epitaxial (MSE) structure in oxide charge balance (OCB) region and a second type MSE structure in SJ region for improved specific on-resistance Rsp and gate-to-drain charge Qgd. The two-type MSE structures can increase the average doping concentration in drift regions of the SGT SJ MOSFETS, as a result, lower Rsp and higher avalanche capability could be achieved without degrading breakdown voltage.