Inventors with similar research interests:
Location History:
- Nishayuna, NY (US) (2016)
- Niskayuma, NY (US) (2018 - 2019)
- Albany, NY (US) (2013 - 2020)
- Yorktown Heights, NY (US) (2019 - 2020)
- Schenectady, NY (US) (2014 - 2023)
- Niskayuna, NY (US) (2013 - 2024)
Years Active: 2013-2025
Title: Ruilong Xie: Mastermind Behind Cutting-Edge Patents
Introduction:
In the world of technological innovation and patents, few names have made as significant an impact as Ruilong Xie. Hailing from Niskayuna, New York, Xie has emerged as a prolific inventor with an impressive portfolio of 939 patents. His groundbreaking contributions to the field of semiconductor technology have revolutionized the industry and earned him widespread recognition. In this article, we delve into Xie's latest patents, career highlights, collaborations, and the impact of his inventions.
Latest Patents:
Xie's latest patents showcase his visionary approach to semiconductor device development. One of his notable inventions is the Hybrid Complementary Metal-Oxide Semiconductor (CMOS) Field Effect Transistor Nanosheet Device. This device is formed by constructing a stack of alternating horizontal nanosheet layers, recessing the stack for an n-type field-effect transistor (nFET), and growing crystalline semiconductor adjacent to the stack. The invention also incorporates the formation of vertical nanosheets and a high-k metal gate structure. This innovation enhances the performance and efficiency of semiconductor devices.
Additionally, Xie has also patented the VTFET with Buried Power Rails, a semiconductor device that incorporates buried power rails, a buried oxide (BOX) layer, and a plurality of channel fins. This invention includes a gate stack with a work function metal (WFM) layer and a high- layer, along with a top epitaxial layer. The design provides improved electrical connectivity and facilitates enhanced performance in semiconductor devices.
Career Highlights:
Xie's professional journey has seen him contribute significantly to the success of renowned companies in the semiconductor industry. He played a pivotal role at GlobalFoundries Inc., a leading semiconductor manufacturing company, where his expertise in device design and technology development helped shape the future of the industry. Moreover, Xie has also made substantial contributions during his tenure at International Business Machines Corporation (IBM). IBM represents a cornerstone of innovation, and Xie's work there has undoubtedly propelled the company's standing in the semiconductor field.
Collaborations:
Collaboration is often a driving force behind groundbreaking innovations, and Xie has had the privilege of working with some brilliant minds. Among his noteworthy collaborations are those with Kangguo Cheng and Chanro Park. As colleagues, they have brought together their expertise to push the boundaries of semiconductor technology, resulting in numerous groundbreaking inventions and patents.
Conclusion:
Ruilong Xie's impressive portfolio of 939 patents exemplifies his unwavering commitment to technological advancement in the semiconductor industry. Through his groundbreaking inventions and collaborations with industry peers, Xie has cemented himself as an influential figure in the field. As technology continues to evolve, his contributions will undoubtedly leave a lasting impact, shaping the landscape of the semiconductor industry for years to come.
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