International Business Machines Corporation

Globalfoundries Inc.

Stmicroelectronics Gmbh

Globalfoundries U.S. Inc.

Globalfoundries Singapore Pte. Ltd.

Other

Intermolecular, Inc.

Globalfoundaries Inc.

Globalfoundires Inc.

Ruilong Xie

Kangguo Cheng

Chanro Park

Julien Frougier

Xiuyu Cai

Tenko Yamashita

Alexander Reznicek

Min Gyu Sung

Chun-chen Yeh

Juntao Li

Hui Zang

Qing Liu

Andrew Mark Greene

Balasubramanian Pranatharthiharan

Lars W Liebmann

Daniel Chanemougame

Ali Khakifirooz

Junli Wang

Heng Wu

Hoon Sik Kim

Nicolas J Loubet

Veeraraghavan S Basker

Chen Zhang

Su Chen Fan

Jingyun Zhang

Laertis Economikos

Carl John Radens

Steven J Bentley

Brent A Anderson

Xunyuan Zhang

Chih-Chao Yang

Xin Miao

Takashi Ando

Dechao Guo

Kisik Choi

Shom Ponoth

Hemanth Jagannathan

Ajey Poovannummoottil Jacob

Haiting Wang

Lawrence Alfred Clevenger

Pouya Hashemi

Bruce Bennett Doris

David V Horak

Chi-Chun Liu

Oleg Gluschenkov

Bahman Hekmatshoartabari

Guillaume Bouche

Zuoguang Liu

Hiroaki Niimi

Fee Li Lie

Reinaldo Ariel Vega

Ekmini Anuja De Silva

Huiming Bu

Edward J Nowak

Choonghyun Lee

Shogo Mochizuki

John H Zhang

Wenyu Xu

Ravikumar Ramachandran

Peng Xu

Theodorus E Standaert

Ruqiang Bao

John Ryan Sporre

Takeshi Nogami

Garo Jacques Derderian

Injo Ok

Oscar Van Der Straten

Sanjay C Mehta

Roy Rongqing Yu

Siva P Adusumilli

Effendi Leobandung

Mukta G Farooq

Michael Rizzolo

Soon-Cheon Seo

Praneet Adusumilli

Robert Russell Robison

Marc Adam Bergendahl

Koichi Motoyama

Hosadurga K Shobha

Tao Li

Rajiv V Joshi

Charles W Koburger, Iii

Terence B Hook

Zhenxing Bi

Cheng-Wei Cheng

Min-Hwa Chi

Thomas N Adam

Hong Yu

Jinping Liu

Robert C Wong

Anthony K Stamper

Daniel C Edelstein

Karthik Balakrishnan

Tak H Ning

Son Van Nguyen

Judson Robert Holt

Baozhen Li

Hong He

Jeng-Bang Yau

Hsueh-Chung Chen

A method including forming a plurality of nanosheets on a substrate and forming a plurality of sacrificial layers on the substrate, wherein the plurality of nanosheets and the plurality of sacrificial layers are arranged as alternating layers. Forming and patterning a first hardmask located on top of one of the sacrificial layers and forming a second hardmask around the first hardmask. Patterning the plurality of nanosheets and the plurality of sacrificial layers. Forming and patterning a dummy gate located on top of first hard mask. Removing the plurality of sacrificial layers. Forming a plurality of nanowires, where the plurality of nanowires is formed by the removal of the plurality of sacrificial layers, where the removal of the plurality of sacrificial layers thins sections of each of the plurality of nanowires forming the plurality of nanowires.

Nanowire source/drain formation for nanosheet device

A semiconductor device includes an electronic circuit within a device layer; wherein the device layer is between a thin layer of wiring for signal connections having a first thickness and a thick layer of wiring for power having a second thickness, the second thickness being greater than the first thickness; a silicon layer above the device layer, the thin layer of wiring, and the thick layer of wiring; a first via connection from a top of the semiconductor device to the thin layer of wiring; a second via connection from the top of the semiconductor device to the thick layer of wiring; and a packaging substrate with a connection to the thick layer of wiring.

TSV and backside power distribution structure

A nanosheet semiconductor device includes channel nanosheets each connected to a source/drain region that has a front surface, a rear surface, and an internal recess between the front surface and the rear surface. The device further includes a source/drain region contact in physical contact with the V shaped internal recess, with the front surface, and with the rear surface. The device may be fabricated by forming the source/drain region, recessing the source/drain region, and by forming a sacrificial source/drain region upon and around the recessed source/drain region. The sacrificial source/drain region may be removed and the source/drain region contact may be formed in place thereof.

Wraparound contact with reduced distance to channel

A buried power rail contact structure is provided that wraps around a source/drain region of a first field effect transistor (FET), contacts a surface of a buried power rail, and has a reduced height as compared to a height of a neighboring source/drain contact structure that contacts a surface of a source/drain region of a second FET. Both the buried power rail contact structure and the source/drain contact structure have a negative taper, i.e., each of the buried power rail contact structure and the source/drain contact structure has outermost sidewalls that slope outward from a topmost surface of the contact structure to a bottommost surface of the contact structure. Such contact structures reduce the parasitic capacitance between a functional gate structure and the contact structure.

Buried power rail with robust connection to a wrap around contact

A dual structure buried rail includes an upper rail and a lower rail. The upper rail may be inset relative to the lower rail. In other words, the lower rail may be wider than the upper rail, and/or the lower rail may have a larger geometrical volume than the upper rail. The upper rail may be located at a boundary of, and/or directly next to, an active device region and the lower rail may extend directly underneath at least a portion of the active device region. The lower rail may extend the entire length of the upper rail. The dual structure buried rail may reduce buried rail resistance which may reduce voltage drop thereacross and provide for improved semiconductor device and/or active device region performance. The dual structure buried rail may provide power potential delivery, provide potential sinking, or the like, to one or more active device region(s).

Dual structured buried rail

A semiconductor structure having improved performance is provided that includes a local enlarged via-to-backside power rail (VBPR) contact structure which connects a source/drain region of one field effect transistor (FET) to a backside power rail.

Local enlarged via-to-backside power rail

A microelectronic structure including a plurality of lower transistors and a plurality of upper transistor, where each of the plurality of lower transistors and the plurality of upper transistors includes a plurality of channel. Where an upper center vertical axis of each of the plurality of upper transistors is staggered from a lower center vertical axis of each of the lower transistors. A lower gate cut is located between each of the plurality of lower transistors. A first upper gate cut located adjacent to a first upper transistor of the plurality of upper transistors, where the first upper gate cut is in direct contact with a plurality of first channels of the first upper transistor.

Method and structure of forming independent contact for staggered CFET

A skip-level through-silicon via structure is provided that enables low resistance via connection for backside power distribution by skipping one or more intermediate backside metal layers. The skip-level through-silicon via structure can enable a greater design flexibility for power grid. The skip-level through-silicon via structure has a large size that provides lower through-silicon via resistance as compared with conventional through-silicon via structures.

Skip-level TSV with hybrid dielectric scheme for backside power delivery

Semiconductor channel layers vertically aligned and stacked one on top of another, each separated by a gate stack material, a source-drain epitaxy region adjacent to the semiconductor channel layers, a vertical side surface of the source-drain epitaxy region is adjacent to a vertical side surface of a conductive trench contact. A first set and a second set of semiconductor channel layers, a conductive trench contact between them and a source-drain between the first set and the conductive trench contact. Forming a first stack, a second stack and a third stack of nanosheet layers, forming a first, second and third sacrificial gate, forming a first source drain between the first and second stack, forming a second source drain between the second and third, forming a vertical trench in the first source drain while protecting the second source drain, and forming a stressor material layer in the vertical trench.

Strain generation and anchoring in gate-all-around field effect transistors

Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a semiconductor chip having a frontside and a backside; a first metal level at the backside of the semiconductor chip; a second metal level above the first metal level; a plurality of damascene vias extending from the second metal level towards the first metal level; and a plurality of subtractive vias extending from the first metal level towards the second metal level, wherein the plurality of damascene vias and the plurality of subtractive vias are staggered to form an interdigitated comb-comb structure. A method of forming the semiconductor structure is also provided.

Decoupling capacitance in backside interconnect

A semiconductor device includes a field effect transistor (FET). The FET includes a gate and a first source or drain (S/D) region. A frontside S/D contact may be connected to and extend vertically upward from a top surface of the first S/D region. The FET further includes a second S/D region. The second S/D region includes a conduit liner and an inner column internal to the conduit liner that extends below a bottom surface of the wraparound gate. A backside S/D contact may be connected to and extend vertically downward from a bottom surface of the second S/D region.

Field effect transistor with backside source/drain

A semiconductor device includes one or more fins extending from a substrate, the one or more fins having source/drain epitaxial grown material (S/D epitaxy) thereon that merges one or more fins, a gate formed over the one or more fins, the gate including high k metal gate disposed between gate spacers and a metal liner over the S/D epitaxy and sides of the gate spacers. The gate includes a self-aligned contact cap over the HKMG and the metal liner.

Formation of trench silicide source or drain contacts without gate damage

A semiconductor memory cell comprising six vertical-transport field-effect transistors (VTFET) on a wafer. The six VTFET are in a first layer. The six VTFET are in a first row.

High density static random-access memory

A semiconductor device includes a backside power rail, a backside ground rail, and a backside isolation rail between the backside power rail and the backside ground rail. The backside isolation rail may provide adequate electrical isolation between the backside power rail and the backside ground rail, thereby enabling the backside power rail and the backside ground rail to be located relatively near to one another. The backside isolation rail may also cure actual electrical shorts between the backside power rail and the backside ground rail.

Isolation rail between backside power rails

Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a metal level, the metal level includes a metal strip including a notch at a side of the metal strip or a pass-through inside the metal strip, wherein the notch or the pass-through is at least partially filled with a dielectric material. The metal level further includes a conductive wiring that vertically passes through the metal strip. The conductive wiring is at least partially inside the notch or inside the pass-through and is insulated from the metal strip by the dielectric material. Methods of manufacturing the semiconductor structure are also provided.

Pass-through wiring in notched interconnect

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Niskayuna, NY, United States of America

Ruilong Xie