The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Oct. 05, 2021
International Business Machines Corporation, Armonk, NY (US);
Huimei Zhou, Albany, NY (US);
Alexander Reznicek, Troy, NY (US);
Miaomiao Wang, Albany, NY (US);
Ruilong Xie, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A CFET (complementary field effect transistor) structure including a first transistor disposed above a second transistor, a first source/drain region of the first transistor disposed above a second source/drain region of the second transistor, a first source/drain contact for the first source/drain region, and a second source drain contact for the second source drain region. The first source/drain contact is isolated from the second source/drain contact by an L-shaped isolation element including vertical and horizontal isolation elements.