Alexander Reznicek

Troy, NY, United States of America

Alexander Reznicek

USPTO Granted Patents = 1,290 

 

Average Co-Inventor Count = 3.9

ph-index = 31

Forward Citations = 6,578(Granted Patents)

Forward Citations (Not Self Cited) = 5,751(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Mt. Kisco, NY (US) (2006 - 2008)
  • Yorktown Heights, NY (US) (2011)
  • Slingerlands, NY (US) (2010 - 2012)
  • Hopewell Junction, NY (US) (2014)
  • Mount Kisko, NY (US) (2012 - 2016)
  • New York, NY (US) (2016)
  • Armonk, NY (US) (2017)
  • Troy, MA (US) (2017)
  • Mount Kisco, NY (US) (2006 - 2018)
  • Rensselaer, NY (US) (2017 - 2018)
  • Troy, NA (2018)
  • Troy, MI (US) (2015 - 2020)
  • Albany, NY (US) (2014 - 2023)
  • Troy, NY (US) (2013 - 2024)

Company Filing History:


Years Active: 2006-2025

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Areas of Expertise:
Field Effect Transistors
Bipolar Junction Transistors
Phase Change Memory
Nanosheet Devices
Resistive Switching Devices
Memory Device Optimization
Virtual Reality Navigation
Epitaxial Growth Techniques
Magnetoresistive Ram
Power Distribution Networks
Semiconductor Device Fabrication
Integrated Circuit Design
1,290 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Alexander Reznicek

Introduction

Alexander Reznicek is a prominent inventor based in Troy, NY (US), known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 1,284 patents, Reznicek has made a lasting impact on the industry through his innovative designs and methodologies.

Latest Patents

Among his latest patents is the "Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devices." This invention features a memory device that includes a pedestal structure containing a cobalt aluminum layer and a magnesium-aluminum-oxide base layer, both exhibiting a (001) crystal orientation. The design enhances control of resistance and improves magnetic properties, such as higher tunnel magnetoresistance (TMR) and higher perpendicular magnetic anisotropy (PMA). Another notable patent is "Gate induced drain leakage reduction in FinFETs," which outlines a method for forming a semiconductor device that optimizes the structure of dielectric spacers to enhance performance.

Career Highlights

Reznicek has worked with leading companies in the technology sector, including International Business Machines Corporation (IBM) and Globalfoundries Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in semiconductor technology.

Collaborations

Throughout his career, Reznicek has collaborated with talented individuals such as Pouya Hashemi and Kangguo Cheng. These partnerships have fostered a creative environment that has led to groundbreaking inventions and improvements in technology.

Conclusion

Alexander Reznicek's extensive patent portfolio and innovative contributions to semiconductor technology highlight his role as a leading inventor in the field. His work continues to influence advancements in memory devices and semiconductor manufacturing processes.

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