Average Co-Inventor Count = 3.85
ph-index = 30
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. International Business Machines Corporation (1,183 from 163,671 patents)
2. Globalfoundries Inc. (78 from 5,671 patents)
3. Elpis Technologies Inc. (9 from 51 patents)
4. Samsung Electronics Co., Ltd. (3 from 129,810 patents)
5. Adeia Semiconductor Bonding Technologies Inc. (3 from 1,847 patents)
6. Stmicroelectronics Gmbh (2 from 2,864 patents)
7. Globalfoundries U.S. Inc. (2 from 896 patents)
8. Renesas Electronics Corporation (1 from 7,504 patents)
9. International Business Corporation (1 from 70 patents)
10. Globalfoundries U.S. 2 LLC (1 from 59 patents)
11. Matheson Tri-gas, Inc. (1 from 53 patents)
12. Adeia Semiconductor Solutions LLC (1 from 17 patents)
1,279 patents:
1. 12432968 - Nanowire source/drain formation for nanosheet device
2. 12408369 - Vertical transport field effect transistors having different threshold voltages along the channel
3. 12402544 - Antenna assisted ReRAM formation
4. 12402342 - Nanosheet device with T-shaped dual inner spacer
5. 12382682 - Gate-all-around nanosheet-FET with variable channel geometries for performance optimization
6. 12364174 - Global heater for phase change memory
7. 12364164 - Reactive serial resistance reduction for magnetoresistive random-access memory devices
8. 12329045 - Phase change memory programming current leakage reduction
9. 12324237 - Diffusion-break region in stacked-FET integrated circuit device
10. 12317537 - Reduced parasitic capacitance semiconductor device containing at least one local interconnect passthrough structure
11. 12317764 - Uniform voltage drop in arrays of memory devices
12. 12310263 - Phase change memory gaps
13. 12293469 - Virtual reality design navigation using a temporal collaboration dependency map
14. 12268016 - Buried power rail formation for vertical field effect transistors
15. 12262552 - Source/drain epitaxy process in stacked FET