The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Sep. 22, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Daniel Schmidt, Niskayuna, NY (US);

Tsung-Sheng Kang, Ballston Lake, NY (US);

Alexander Reznicek, Troy, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 23/48 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H01L 23/481 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6757 (2025.01); H10D 62/151 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01);
Abstract

A semiconductor device includes a nanosheet stack on a substrate. A first source/drain is on a first side of the nanosheet stack and a second source/drain is on an opposing side of the nanosheet stack. A backside contact includes a first contact end on a first end of the first source/drain and an opposing second contact end in electrical communication with a backside power distribution network. A frontside contact includes a first contact end on a first end of the second source/drain and an opposing second contact end in electrical communication with a backend of line (BEOL) interconnect. A placeholder extends from an opposing second end of the second source/drain.


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