Ballston Lake, NY, United States of America

Tsung-Sheng Kang

This inventor holds 53 USPTO granted patents and 74 published patent applications, plus 2 CIPO patents and 1 EPO patent, primarily in Semiconductor Technology. Top assignee: International Business Machines Corporation. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsung-Sheng Kang. Retrieved from https://idiyas.com/inventor/tsung-sheng-kang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 53 (Patent Applications = 74)

% Patents Active = 96.2

CIPO Patents = 2 (Patent Applications = 1)

EPO Patents = 1 (Patent Applications = 9)

Average Co-Inventor Count = 4.3

ph-index = 2

Forward Citations = 10(Granted Patents)

Company Filing History:

53 out of 166,351

International Business Machines Corporation

patents

Years Active: 2022-2026

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Areas of Expertise:

Forksheet Transistor

Stacked FET

CMOS Integration

Backside Contact

Nanosheet Architecture

Power Distribution Network

Magneto-Resistive RAM

Vertical Transport FET

Epitaxial Layers

AI Accelerator

Static RAM

Dielectric Structure

53 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12765011 - Stacked nanosheet device with step configuration where the bottom nanosheet stack is wider than the top nanosheet stack (2026-10-13),

2. 12764999 - Backside wrap around contact structure (2026-10-13),

3. 12733256 - Cross coupled stacked transistors (2026-09-08),

4. 12733245 - Forksheet field effect transistor including t-shaped backbone (2026-09-08),

5. 12727243 - Backside diffusion break (2026-09-01),

6. 12727229 - Extended source/drain contact for shifted drain voltage for a backside power distribution network (2026-09-01),

7. 12720853 - Placeholder with dielectric liner protection to prevent direct backside contact (DBC) from shorting to gate (2026-08-25),

8. 12720772 - Hybrid memory on front and backside of a wafer (2026-08-25),

9. 12701788 - Inverter with backside power delivery network (2026-08-04),

10. 12696745 - Composite contact between backside power element and source/drain region (2026-07-28),

11. 12684869 - Contact placeholder formation for different device types (2026-07-14),

12. 12672333 - Backside placeholder dielectric fill (2026-06-30),

13. 12672299 - Vertical transport field-effect transistor with late fin cut (2026-06-30),

14. 12641874 - Spacer protecting semiconductor substrate under passive device during backside contact formation (2026-05-26),

15. 12628627 - Forksheet field effect transistor including self-aligned gate (2026-05-12),

Title: The Innovative Journey of Inventor Tsung-Sheng Kang

Introduction: Tsung-Sheng Kang, a talented inventor hailing from Ballston Lake, NY, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Kang holds several patents in various technological domains, showcasing his versatility and creativity in inventing new solutions to complex problems.

Career Highlights: Throughout his illustrious career, Kang has demonstrated a keen eye for identifying gaps in the market and developing innovative products to fill those voids. His dedication to pushing the boundaries of technology has earned him recognition as a pioneer in his field.

Collaborations: Kang has collaborated with leading tech companies and research institutions to further his inventions and bring them to the market. His ability to work effectively in multidisciplinary teams has led to the successful implementation of his innovative ideas.

Conclusion: Tsung-Sheng Kang's passion for innovation and his relentless pursuit of excellence have solidified his position as a respected inventor in the technology industry. His contributions continue to inspire future generations of inventors to think outside the box and create solutions that shape the world of tomorrow.

Profile summary based on public USPTO records.