The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Sep. 15, 2022
International Business Machines Corporation, Armonk, NY (US);
Tsung-Sheng Kang, Ballston Lake, NY (US);
Tao Li, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A CMOS apparatus includes an n-doped field effect transistor (nFET); and a p-doped field effect transistor (pFET), each of which has a source structure and a drain structure. A common backside drain contact, which is disposed at the backside surface of the nFET and the pFET, electrically connects the nFET drain structure and the pFET drain structure to a backside interconnect layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile