The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Mar. 15, 2024
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Alexander Reznicek, Troy, NY (US);
Tsung-Sheng Kang, Ballston Lake, NY (US);
Sagarika Mukesh, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device is provided that includes a transistor located on a frontside of a dielectric layer, the transistor includes a source/drain region located on a first side of a gate structure and a source/drain trench structure located on a second side of the gate structure. The source/drain trench structure extends through the dielectric layer and has an upper portion located on the frontside of the dielectric layer and a lower portion located on the backside of the dielectric layer. A backside wrap around contact structure is present that physically contacts, and wraps around, the lower portion of the source/drain trench structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile