The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Dec. 28, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Sagarika Mukesh, Albany, NY (US);

Alexander Reznicek, Troy, NY (US);

Tsung-Sheng Kang, Ballston Lake, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/85 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 62/115 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/8503 (2025.01); H10D 64/021 (2025.01); H10D 84/0128 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01);
Abstract

One or more embodiments includes a semiconductor device. The semiconductor device includes: a first Gate-All-Around (GAA) field-effect transistor (FET) disposed on a silicon layer; and a second GAA FET disposed on the silicon layer adjacent to the first GAA FET. The semiconductor device also includes: an isolation layer disposed within the silicon layer between a first bottom dielectric isolation (BDI) layer of the first GAA FET and a second BDI layer of the second GAA FET; and a gate structure disposed proximate the first GAA FET and the second GAA FET, wherein at least one of a cap or a sidewall spacer isolates the gate structure from the silicon layer.


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Mukesh, Sagarika. (2026). Nanosheet device with nitride isolation structures (U.S. Patent No. 12777689). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777689

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