The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Nov. 07, 2023
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Tsung-Sheng Kang, Ballston Lake, NY (US);
Sagarika Mukesh, Albany, NY (US);
Alexander Reznicek, Troy, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/01 (2026.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10D 30/014 (2025.01); H10D 30/031 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0188 (2025.01); H10D 84/85 (2025.01);
Abstract
A semiconductor device includes a first-type transistor, a second-type transistor, and a t-shaped backbone. The first-type transistor includes a first-type source/drain and the second-type transistor includes a second-type source/drain. The t-shaped backbone includes a wall and a sub-wall. The wall separates the first-type transistor and the second-type source/drain. The sub-wall extends from the wall and into the second-type source/drain.