The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Sep. 29, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Koichi Motoyama, Clifton Park, NY (US);
Alexander Reznicek, Troy, NY (US);
Tsung-Sheng Kang, Ballston Lake, NY (US);
Oscar Van Der Straten, Guilderland Center, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/20 (2026.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/83 (2025.01); H10W 20/00 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/20 (2026.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/834 (2025.01); H10W 20/023 (2026.01); H10W 20/069 (2026.01); H10W 20/427 (2026.01);
Abstract
A semiconductor device includes a transistor having a source/drain region and a contact disposed on the source/drain region. The semiconductor device further includes a via extending from the contact along a side of the source/drain region to a power element. The contact and the via each comprise a plurality of conductive materials.