The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jan. 05, 2024
International Business Machines Corporation, Armonk, NY (US);
Tsung-Sheng Kang, Ballston Lake, NY (US);
Sagarika Mukesh, Albany, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Alexander Reznicek, Troy, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor integrated circuit (IC) device includes a diffusion break region that has a diffusion break dielectric adjacent to or between diffusion break isolation wall(s). The diffusion break region may separate adjacent transistors. The diffusion break isolation wall(s) may include respective retained portions of a backside spacer, a bottom isolation, respective inner spacers, and residual active semiconductor nanolayers. The diffusion break region may be fabricated by depositing a diffusion break dielectric within a diffusion break opening against the diffusion break isolation wall(s).