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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12457780 B1

PDFFull Text
Date of Patent:
Oct. 28, 2025

Filed:

Dec. 01, 2022

Semiconductor device with void under source/drain region for backside contact

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Alexander Reznicek, Troy, NY (US);

Daniel Schmidt, Niskayuna, NY (US);

Tsung-Sheng Kang, Ballston Lake, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

Kimberly Zillig

Primary Examiner:

Sonya Mccall-Shepard

Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 21/74 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H01L 23/481 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6757 (2025.01); H10D 62/151 (2025.01); H10D 64/017 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01);
Abstract

Embodiments are disclosed for a method for fabricating a semiconductor device. The method includes forming a recess under a region for a source/drain (S/D). The method further includes depositing a sacrificial placeholder liner conformally. Additionally, the method includes performing a sacrificial material overfill. Further, the method includes performing an etch back of the sacrificial material overfill. Also, the method includes performing S/D epitaxial (epi) growth over a remaining placeholder sacrificial liner to generate an S/D epi for the S/D.

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