The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Oct. 20, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Choonghyun Lee, Kanagawa, JP;
Takashi Ando, Eastchester, NY (US);
Alexander Reznicek, Troy, NY (US);
Jingyun Zhang, Albany, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/63 (2025.01); H10D 30/01 (2025.01); H10D 62/17 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 62/822 (2025.01);
U.S. Cl.
CPC ...
H10D 30/63 (2025.01); H10D 30/025 (2025.01); H10D 62/307 (2025.01); H10D 84/0167 (2025.01); H10D 84/0195 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01); H10D 84/856 (2025.01); H10D 62/822 (2025.01);
Abstract
Embodiments are for vertical field effect transistors having different threshold voltages along the channel. A vertical fin having a vertical channel is formed, one end of the vertical channel including a doped layer, the doped layer causing a threshold voltage at the one end to be different from a remainder of the vertical channel. A source and a drain are formed each coupled to opposite ends of the vertical fin, gate material being formed on the vertical channel.