Albany, NY, United States of America

Jingyun Zhang

This inventor holds 187 USPTO granted patents and 32 published patent applications, primarily in Field Effect Transistors (CPC class H01L29-42392). Top assignees: International Business Machines Corporation, Commissariat a L'energie Atomique Et Aux Energies Alternatives, Elpis Technologies Inc.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jingyun Zhang. Retrieved from https://idiyas.com/inventor/jingyun-zhang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 187 

% Patents Active = 79.7

Average Co-Inventor Count = 4.3

ph-index = 11

Forward Citations = 535(Granted Patents)

Forward Citations (Not Self Cited) = 389(Dec 10, 2025)


Inventors with similar research interests:

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Company Filing History:


Years Active: 2018-2026

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Areas of Expertise:
Stacked Transistors
Gate-All-Around
Nanosheet Devices
Multi-Threshold Voltage
Field Effect Transistors
Electrostatic Discharge
FinFETs
Tri-Layer Dielectric
Secure Chip Identification
Phase Change Memory
Contact Resistance
Hybrid FET
187 patents (USPTO):Explore Patents

Title: Jingyun Zhang: Innovator Extraordinaire with 144 Patents

Introduction:

Meet Jingyun Zhang, a brilliant inventor and semiconductor device expert based in Albany, NY. With an impressive count of 144 patents to his name, Zhang has made significant contributions to the field of nanoelectronics. In this article, we delve into his latest patents, career highlights, notable collaborations, and his enduring impact in the world of innovation.

Latest Patents:

Zhang's recent patent titled "Formation of wrap-around-contact for gate-all-around nanosheet FET" showcases his proficiency in semiconductor device design. This invention describes a cutting-edge semiconductor device, including a substrate material and a gate stack with multiple nanosheet channel layers. Each layer is controlled by metal gate layers, enabling precise control over the device's performance.

Additionally, Zhang's patent for "Multi-threshold voltage gate-all-around transistors" further exemplifies his expertise. This method for forming a semiconductor device structure involves crucial techniques such as etching, crystallization, and dipole layer formation, allowing for efficient control and optimization of the transistor's electrical characteristics.

Career Highlights:

Throughout his career, Zhang has made remarkable contributions to the field of nanoelectronics. He has worked extensively with renowned companies such as IBM (International Business Machines Corporation) and Commissariat à l'Energie Atomique et aux Energies Alternatives (CEA). His association with these organizations demonstrates his versatility and adaptability in contributing to cutting-edge research and development.

Collaborations:

Zhang's collaborations have further amplified his innovative pursuits. Working alongside esteemed colleagues like Choonghyun Lee and Alexander Reznicek, Zhang has leveraged collective expertise to push the boundaries of semiconductor technology. These collaborations have facilitated the exchange of ideas, fostering a culture of innovation and inspiring breakthroughs in the field.

Conclusion:

Jingyun Zhang's outstanding patent count and groundbreaking inventions solidify his position as a leading innovator in the semiconductor industry. Through his revolutionary contributions to semiconductor device design, Zhang continues to revolutionize the field of nanoelectronics. With a wealth of knowledge and a drive to explore uncharted territories, Zhang serves as an inspiration to aspiring inventors and enthusiasts alike.

For more information on inventors, patents, and remarkable innovations, visit idiyas.com, your go-to source for all things related to breakthrough technologies and advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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