Rensselaer, NY, United States of America

Choonghyun Lee

Average Co-Inventor Count = 4.0

ph-index = 14

Forward Citations = 910(Granted Patents)

Forward Citations (Not Self Cited) = 580(Sep 21, 2024)

DiyaCoin DiyaCoin 1.11 

Inventors with similar research interests:


Location History:

  • Renesselaer, NY (US) (2019)
  • Albany, NY (US) (2020 - 2023)
  • Chigasaki, JP (2022 - 2023)
  • Kanagawa, JP (2023)
  • Rensselaer, NY (US) (2017 - 2024)


Years Active: 2017-2025

where 'Filed Patents' based on already Granted Patents

378 patents (USPTO):

Title: Choonghyun Lee: Pioneering Innovator in Semiconductor Technology

Introduction:

In the world of semiconductor technology, one name stands out as a true trailblazer Choonghyun Lee. Hailing from Rensselaer, NY (US), Lee is a highly accomplished inventor with an impressive record of 369 patents. His innovative contributions have significantly advanced the field of semiconductor devices. This article delves into Lee's latest patents, career highlights, notable collaborations, and his immense contribution to the industry.

Latest Patents:

Among Lee's recent patents, the "Formation of wrap-around-contact for gate-all-around nanosheet FET" showcases his expertise. This semiconductor device incorporates a substrate material, a gate stack with nanosheet channel layers, and bridging structures connecting the source/drain regions. Such novel design improvements contribute to enhanced performance and efficiency in nanoscale transistors.

Another notable patent is Lee's work on "Multi-threshold voltage gate-all-around transistors." This method involves selectively crystallizing a second dielectric layer to prevent diffusion and controlling the dipole layer within a transistor's structure. This innovation further extends the capabilities of semiconductor devices, enabling multi-threshold voltage configurations for various applications.

Career Highlights:

Throughout his illustrious career, Lee has made significant contributions to the development of semiconductor technology. Notably, he has worked with two renowned companies in the industry.

At IBM (International Business Machines Corporation), Lee was involved in groundbreaking research and development projects. His expertise and meticulous approach greatly contributed to the company's advancements in semiconductor device architectures and fabrication processes.

Lee also collaborated with Elpis Technologies Inc., a company recognized for its innovation in semiconductor materials and advanced device designs. His contributions to Elpis Technologies expanded their portfolio of cutting-edge solutions, addressing the ever-evolving needs of the semiconductor industry.

Collaborations:

Lee's success is not limited to his individual achievements; he has also collaborated with exceptional coworkers. One such collaborator is Kangguo Cheng, a fellow innovator known for his expertise in nanotechnology. Together, they have worked on various projects, sharing their knowledge and pushing the boundaries of semiconductor technology.

Another notable collaboration for Lee was with Takashi Ando. Ando's expertise in semiconductor device design and integration complemented Lee's expertise in materials and fabrication processes. With their combined efforts, they have brought forth groundbreaking solutions to complex challenges in the field.

Conclusion:

Choonghyun Lee's contributions to the world of semiconductor technology are nothing short of remarkable. With an extensive patent portfolio and a wealth of experience, Lee has pushed the boundaries of what is possible for semiconductor devices. Collaborating with renowned companies and exceptional coworkers, he has left an indelible mark on the industry. As a trailblazing innovator, Lee's work continues to inspire and drive advancements in semiconductor technology, shaping the future of digital innovation.

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