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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11842998 B1

PDFFull Text
Date of Patent:
Dec. 12, 2023

Filed:

Dec. 31, 2019

Semiconductor device and method of forming the semiconductor device

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Robin Hsin Kuo Chao, Cohoes, NY (US);

Hemanth Jagannathan, Niskayuna, NY (US);

Choonghyun Lee, Rensselaer, NY (US);

Chun Wing Yeung, Niskayuna, NY (US);

Jingyun Zhang, Albany, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Kimberly Zillig

McGinn I.P. Law Group, PLLC

Primary Examiner:

Xiaoming Liu

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/165 (2006.01); H01L 29/161 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/02532 (2013.01); H01L 21/324 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823885 (2013.01); H01L 29/1054 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device includes a first diffusion region having a first conductivity type, a first SiGe fin formed on the first diffusion region, a second diffusion region having a second conductivity type, and a second SiGe fin formed on the second diffusion region and including a central portion including a first amount of Ge, and a surface portion including a second amount of Ge which is greater than the first amount. A total width of the central portion and the surface portion is substantially equal to a width of the second diffusion region.

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