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Chun Wing Yeung

This inventor holds 73 USPTO granted patents and 54 published patent applications and 1 EPO patent, primarily in Nanosheet Transistors (CPC class H01L). Top assignees: International Business Machines Corporation, Elpis Technologies Inc., Globalfoundries Inc.. Active years: 2017-2024.

USPTO Granted Patents = 73 (Patent Applications = 54)

% Patents Active = 75.3

EPO Patents = 1 (Patent Applications = 31)

Average Co-Inventor Count = 3.7

ph-index = 9

Forward Citations = 301(Granted Patents)

Forward Citations (Not Self Cited) = 261(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Niskayuna, NY (US) (2017 - 2023)
Portland, OR (US) (2023 - 2024)

Company Filing History:

71 out of 166,264

International Business Machines Corporation

patents

1 out of 52

Elpis Technologies Inc.

Years Active: 2017-2024

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Areas of Expertise:

III-V Nanosheet Devices

Vertical Field-Effect Transistor

Self-Aligned Transistors

Gate Fill Techniques

Contact Resistance Measurement

Bottom Channel Isolation

High-k Dielectric

Directed Self-Assembly

Semiconductor Fabrication

Nanosheet MOSFET

Epitaxial Growth

Fin Field-Effect Transistor

73 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11990530 - Replacement-channel fabrication of III-V nanosheet devices (2024-05-21),

2. 11842998 - Semiconductor device and method of forming the semiconductor device (2023-12-12),

3. 11742409 - Replacement-channel fabrication of III-V nanosheet devices (2023-08-29),

4. 11569347 - Self-aligned two-dimensional material transistors (2023-01-31),

5. 11164870 - Stacked upper fin and lower fin transistor with separate gate (2021-11-02),

6. 11081567 - Replacement-channel fabrication of III-V nanosheet devices (2021-08-03),

7. 11024738 - Measurement of top contact resistance in vertical field-effect transistor devices (2021-06-01),

8. 11011643 - Nanosheet FET including encapsulated all-around source/drain contact (2021-05-18),

9. 10991797 - Self-aligned two-dimensional material transistors (2021-04-27),

10. 10985273 - Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile (2021-04-20),

11. 10978576 - Techniques for vertical FET gate length control (2021-04-13),

12. 10957763 - Gate fill utilizing replacement spacer (2021-03-23),

13. 10930793 - Bottom channel isolation in nanosheet transistors (2021-02-23),

14. 10930567 - Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact (2021-02-23),

15. 10916640 - Approach to high-k dielectric feature uniformity (2021-02-09),

Title: Innovator Spotlight: Chun Wing Yeung - Pioneering Semiconductor Device Technologies

Introduction:

Chun Wing Yeung, a talented inventor based in Niskayuna, NY, has made significant contributions to the field of semiconductor device technologies. With an impressive portfolio of 73 patents, Yeung continues to drive innovation in the industry. Let's delve into his latest patents, career highlights, and collaborations that have shaped his prolific career.

Latest Patents:

Yeung's latest patents showcase his expertise in replacement-channel fabrication of III-V nanosheet devices. These semiconductor devices utilize a unique method of forming a stack of sacrificial layers to grow replacement channel layers and source/drain regions. By etching away sacrificial layers and forming gate stacks, Yeung's inventions demonstrate advanced techniques in semiconductor device fabrication.

Semiconductor device and method of forming the semiconductor device:

- Description: The semiconductor device includes SiGe fins with varying amounts of germanium, enhancing performance.

- Technical Details: The total width of the SiGe fins corresponds to the width of diffusion regions, optimizing device functionality.

Career Highlights:

Yeung has honed his skills and expertise while working at renowned companies such as IBM and Globalfoundries Inc. These experiences have provided him with valuable insights and opportunities to work on cutting-edge technologies in the semiconductor industry. Yeung's career highlights exemplify his commitment to excellence and innovation.

Collaborations:

Throughout his career, Yeung has collaborated with talented individuals such as Chen Zhang and Choonghyun Lee. Their combined efforts have resulted in groundbreaking advancements in semiconductor device technologies. By leveraging their diverse skills and knowledge, Yeung and his colleagues have achieved remarkable success in the field.

Conclusion:

Chun Wing Yeung's remarkable journey as an inventor underscores his passion for pushing the boundaries of semiconductor device technologies. With a strong focus on innovation and collaboration, Yeung continues to make significant contributions to the industry. His latest patents and career highlights serve as testaments to his dedication and expertise in driving technological advancements.

Profile summary based on public USPTO records.

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