The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Oct. 01, 2019
International Business Machines Corporation, Armonk, NY (US);
Chun Wing Yeung, Niskayuna, NY (US);
ChoongHyun Lee, Rensselaer, NY (US);
Jingyun Zhang, Albany, NY (US);
Robin Hsin Kuo Chao, Cohoes, NY (US);
Heng Wu, Guilderland, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor structure includes forming at least one fin disposed over a substrate, wherein sidewalls of the at least one fin includes a first portion proximate a top surface of the substrate having a tapered profile and a second portion disposed above the first portion. The method also includes forming a bottom source/drain region surrounding at least part of the first portion of the sidewalls of the at least one fin having the tapered profile and forming a bottom spacer disposed over a top surface of the bottom source/drain region surrounding at least part of the second portion of the sidewalls of the at least one fin. The at least one fin provides a channel for a vertical field-effect transistor.