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For the Inventor, By the Inventor

Cohoes, NY, United States of America

Robin Hsin Kuo Chao

This inventor holds 25 USPTO granted patents and 4 published patent applications, primarily in Nanosheet Transistors. Top assignees: International Business Machines Corporation, Elpis Technologies Inc.. Active years: 2019-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robin Hsin Kuo Chao. Retrieved from https://idiyas.com/inventor/robin-hsin-kuo-chao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 72.0

Average Co-Inventor Count = 4.5

ph-index = 4

Forward Citations = 41(Granted Patents)


Location History:

  • Cohoes, NY (US) (2019 - 2023)
  • Portland, OR (US) (2021 - 2024)

Company Filing History:

goldMedal24 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal1 out of 52 
 
Elpis Technologies Inc.
 patents

Years Active: 2019-2024

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Areas of Expertise:
Nanosheet Transistors
Vertical FET
Wafer Testing
Machine Learning
Epitaxial Nucleation
Dielectric Isolation
Defectivity Measurement
Process Control
Channel Fabrication
Etch-Stop Techniques
Predictive Modelling
Device Formation
25 patents (USPTO):Explore Patents
1. 12046680 - Inner spacer formation for nanosheet transistors (2024-07-23),
2. 11990530 - Replacement-channel fabrication of III-V nanosheet devices (2024-05-21),
3. 11842998 - Semiconductor device and method of forming the semiconductor device (2023-12-12),
4. 11742409 - Replacement-channel fabrication of III-V nanosheet devices (2023-08-29),
5. 11568101 - Predictive multi-stage modelling for complex process control (2023-01-31),
6. 11199505 - Machine learning enhanced optical-based screening for in-line wafer testing (2021-12-14),
7. 11081567 - Replacement-channel fabrication of III-V nanosheet devices (2021-08-03),
8. 11079337 - Secure wafer inspection and identification (2021-08-03),
9. 10985273 - Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile (2021-04-20),
10. 10978576 - Techniques for vertical FET gate length control (2021-04-13),
11. 10903315 - Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection (2021-01-26),
12. 10756178 - Self-limiting and confining epitaxial nucleation (2020-08-25),
13. 10756177 - Self-limiting and confining epitaxial nucleation (2020-08-25),
14. 10741639 - Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection (2020-08-11),
15. 10692203 - Measuring defectivity by equipping model-less scatterometry with cognitive machine learning (2020-06-23),

Title: Innovations in Semiconductor Technology: The Contributions of Robin Hsin Kuo Chao

Introduction

Robin Hsin Kuo Chao is a prominent inventor based in Cohoes, NY, recognized for his significant contributions to semiconductor technology. With an impressive portfolio of 25 patents, Chao has made remarkable strides in the field, particularly in the development of nanosheet transistors and devices.

Latest Patents

Among his latest innovations, two patents stand out:

1. **Inner spacer formation for nanosheet transistors** - This patent describes a semiconductor structure comprising a plurality of gate structures alternately stacked with a plurality of channel layers, along with a plurality of spacers located on the lateral sides of the gate structures. The design allows for spacers with distinct shapes, enhancing the functionality of the transistor.

2. **Replacement-channel fabrication of III-V nanosheet devices** - This invention outlines methods for forming semiconductor devices by creating a stack of alternating first and second sacrificial layers. It details the process of growing replacement channel layers and source/drain regions from the sidewalls of these layers, providing a methodical approach to the development of advanced semiconductor applications.

Career Highlights

Chao has worked with renowned companies, including International Business Machines Corporation (IBM) and Elpis Technologies Inc. His expertise in semiconductor technology has played a crucial role in the advancement of the industry, contributing to innovations that meet today's technological demands.

Collaborations

Throughout his career, Robin Hsin Kuo Chao has collaborated with notable professionals, including Chun Wing Yeung and Jingyun Zhang. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking developments in semiconductor technology.

Conclusion

Robin Hsin Kuo Chao's contributions to the field of semiconductor technology are invaluable, with a rich portfolio of patents showcasing his innovative spirit. As he continues to explore new avenues for innovation, his work remains at the forefront of advancing technology, influencing the future of the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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