The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Apr. 18, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Robin Hsin Kuo Chao, Cohoes, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Nicolas Loubet, Guilderland, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 21/306 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/0217 (2013.01); H01L 21/02636 (2013.01); H01L 21/30604 (2013.01); H01L 21/31116 (2013.01); H01L 29/0649 (2013.01); H01L 29/0665 (2013.01); H01L 29/0847 (2013.01); H01L 29/41733 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/458 (2013.01); H01L 29/6653 (2013.01); H01L 29/66439 (2013.01); H01L 29/66606 (2013.01); H01L 29/66636 (2013.01); H01L 29/66742 (2013.01); H01L 29/66772 (2013.01); H01L 29/66795 (2013.01); H01L 29/66871 (2013.01); H01L 29/785 (2013.01); H01L 29/786 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 29/665 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method of fabricating a semiconductor device includes forming a fin in a substrate and depositing a spacer material on the fin. The method includes recessing the spacer material so that a surface of the fin is exposed. The method includes removing a portion of the fin within lateral sidewalls of the spacer material to form a recess, leaving a portion of the fin on the lateral sidewalls. The method further includes depositing a semiconductor material within the recess.