Kangguo Cheng

Graduated from:

University of Illinois Urbana-Champaign (USA)

Kangguo Cheng: Invention As Team Sport

USPTO Granted Patents = 2,835 (Patent Applications = 239)

CIPO Patents = 1 (Patent Applications = 2)

EPO Patents = 7 (Patent Applications = 27)

Average Co-Inventor Count = 3.5

ph-index = 39

Forward Citations = 14,099(Granted Patents)

Forward Citations (Not Self Cited) = 10,619(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Ossining, NY (US) (2011)
Hopewell Junction, NY (US) (2012 - 2015)
Beacon, NY (US) (2004 - 2016)
Yorktown Heights, NY (US) (2014 - 2016)
Slingerlands, NY (US) (2016)
Guilderland, NY (US) (2008 - 2017)
Albany, NY (US) (2011 - 2024)
Schenectady, NY (US) (2012 - 2024)

Company Filing History:

2,591 out of 164,221

International Business Machines Corporation

Adeia Semiconductor Bonding Technologies Inc.

patents

4. 19 out of 2,871

Stmicroelectronics Gmbh

patents

5. 12 out of 51

Elpis Technologies Inc.

patents

6. 10 out of 20

Adeia Semiconductor Solutions LLC

patents

7. 6 out of 4,872

Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives

patents

8. 5 out of 131,766

Samsung Electronics Co., Ltd.

patents

9. 4 out of 7,529

Renesas Electronics Corporation

patents

10. 2 out of 59

Globalfoundries U.S. 2 LLC

patents

11. 2 out of 945

Globalfoundries U.S. Inc.

International Business Corporation

patents

where one patent can have more than one assignee

Years Active: 2004-2025

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Areas of Expertise:

Phase Change Memory

Nanosheet Transistor

Gate-All-Around Fet

Finfet Devices

Resistive Memory

Magnetoresistive Ram

Physical Unclonable Function

Dynamic Dual Functionality

Vertical Stacked Transistors

Strained Channel Technology

Conductive Cladding

Nano Sheet Technology

2,835 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12513985 - CFET with independent gate control and low parasitic capacitance (2025-12-30),

2. 12513980 - Stacked vertical transport field effect transistor with anchors (2025-12-30),

3. 12495587 - Self-aligned contact (SAC) in nanosheet transistors (2025-12-09),

4. 12489053 - Interconnect structure including patterned metal lines (2025-12-02),

5. 12484250 - Horizontally stacked nanosheet gate all around device structure (2025-11-25),

6. 12477779 - Gate-all-around field-effect-transistor with wrap-around-channel inner spacer (2025-11-18),

7. 12476136 - Liner-less via contact (2025-11-18),

8. 12471506 - Phase-change memory cell with reduced heater size (2025-11-11),

9. 12453296 - Phase-change memory device with conductive cladding (2025-10-21),

10. 12453294 - Multi-level programming of phase change memory device (2025-10-21),

11. 12453176 - Heterogeneous gate all around dielectric thickness (2025-10-21),

12. 12446232 - MRAM-based chip identification with free random programming (2025-10-14),

13. 12439672 - Semiconductor backside contact structure with increased contact area (2025-10-07),

14. 12439633 - VTFET with controlled fin height (2025-10-07),

15. 12439631 - Non-self-aligned wrap-around contact in a tight gate pitched transistor (2025-10-07),

Title: The Innovative Mind of Kangguo Cheng

Introduction

Kangguo Cheng is a prominent inventor based in Albany, NY, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 2,827 patents, Cheng has established himself as a leading figure in innovation and invention.

Latest Patents

Among his latest patents, Cheng has developed a multi-level programming of phase change memory device. This device features a phase change structure with a heater coupled to its first surface and electrodes strategically placed to enhance its functionality. Another notable patent is the heterogeneous gate all around dielectric thickness, which involves a semiconductor design that includes two gate-all-around (GAA) field-effect transistors (FETs). This innovation optimizes gate dielectric resistance, showcasing Cheng's expertise in semiconductor design.

Career Highlights

Cheng has had a distinguished career, working with renowned companies such as IBM and Globalfoundries Inc. His work in these organizations has allowed him to push the boundaries of technology and contribute to groundbreaking advancements in the industry.

Collaborations

Throughout his career, Cheng has collaborated with talented individuals, including Ali Khakifirooz and Juntao Li. These partnerships have fostered an environment of creativity and innovation, leading to the development of cutting-edge technologies.

Conclusion

Kangguo Cheng's remarkable achievements in the field of semiconductor technology and his extensive patent portfolio highlight his status as a leading inventor. His contributions continue to shape the future of technology and inspire future generations of innovators.

This text is generated by artificial intelligence and may not be accurate.