The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Sep. 22, 2023
Applicant:
Adeia Semiconductor Solutions Llc, San Jose, CA (US);
Inventors:
Zhenxing Bi, Niskayuna, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Peng Xu, Guilderland, NY (US);
Wenyu Xu, Albany, NY (US);
Assignee:
Adeia Semiconductor Solutions LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0177 (2025.01); H10D 84/0193 (2025.01); H10D 84/85 (2025.01); H10D 84/853 (2025.01); H10D 30/0243 (2025.01);
Abstract
Semiconductor devices and methods of forming a first layer cap at ends of layers of first channel material in a stack of alternating layers of first channel material and second channel material. A second layer cap is formed at ends of the layers of second channel material. The first layer caps are etched away in a first device region. The second layer caps are etched away in a second device region.