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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12520567 B1

PDFFull Text
Date of Patent:
Jan. 06, 2026

Filed:

Sep. 22, 2023

Hybrid-channel nano-sheet fets

Applicant:

Adeia Semiconductor Solutions Llc, San Jose, CA (US);

Inventors:

Zhenxing Bi, Niskayuna, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Peng Xu, Guilderland, NY (US);

Wenyu Xu, Albany, NY (US);

Assignee:

Adeia Semiconductor Solutions LLC, San Jose, CA (US);

Attorney:

HALEY GUILIANO LLP

Primary Examiner:

Phat X Cao

Int. Cl.
CPC ...
H10D 84/03 (2025.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0177 (2025.01); H10D 84/0193 (2025.01); H10D 84/85 (2025.01); H10D 84/853 (2025.01); H10D 30/0243 (2025.01);
Abstract

Semiconductor devices and methods of forming a first layer cap at ends of layers of first channel material in a stack of alternating layers of first channel material and second channel material. A second layer cap is formed at ends of the layers of second channel material. The first layer caps are etched away in a first device region. The second layer caps are etched away in a second device region.

Find Patent Forward Citations

Bi, Zhenxing. (2026). Hybrid-channel nano-sheet fets (U.S. Patent No. 12520567). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12520567

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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