The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Dec. 14, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Julien Frougier, Albany, NY (US);

Andrew M. Greene, Slingerlands, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Veeraraghavan S. Basker, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 64/021 (2025.01); H10D 64/258 (2025.01);
Abstract

A gate-all-around field effect transistor device is provided. The gate-all-around field effect transistor device includes one or more channel layers on a substrate. The gate-all-around field effect transistor device further includes an inner spacer wrapped around four sides of an end portion of each of the one or more channel layers. The gate-all-around field effect transistor device further includes a portion of an inner spacer liner between a portion of an upper most channel layer and a portion of an outer spacer.


Find Patent Forward Citations

Frougier, Julien. (2025). Gate-all-around field-effect-transistor with wrap-around-channel inner spacer (U.S. Patent No. 12477779). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12477779

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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