Julien Frougier

USPTO Granted Patents = 223 (Patent Applications = 204)

CIPO Patents = 1 (Patent Applications = 1)

EPO Patents = 1 (Patent Applications = 19)

Average Co-Inventor Count = 4.3

ph-index = 15

Forward Citations = 901(Granted Patents)

Forward Citations (Not Self Cited) = 729(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

160 out of 164,219

International Business Machines Corporation

Globalfoundries U.S. Inc.

patents

4. 2 out of 1,857

Adeia Semiconductor Bonding Technologies Inc.

patents

5. 1 out of 10

Globalfoundaries Inc.

patents

6. 1 out of 20

Adeia Semiconductor Solutions LLC

patents

where one patent can have more than one assignee

Years Active: 2018-2025

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Areas of Expertise:

Semiconductor Devices

Gate-All-Around Transistors

Nanosheet Technology

Phase-Change Memory

Magnetoresistive Ram

Stacked Transistors

Dielectric Isolation

Fin Field Effect Transistors

Dynamic Dual Functionality

Resistive Switching Memory

Electrostatic Control

Reconfigurable Ring Oscillator

223 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12507437 - Direct backside self-aligned contact (2025-12-23),

2. 12501698 - Stacked transistors having self aligned backside contact with backside replacement metal gate (2025-12-16),

3. 12500183 - Support dielectric fin to prevent gate flop-over in nanosheet transistors (2025-12-16),

4. 12495587 - Self-aligned contact (SAC) in nanosheet transistors (2025-12-09),

5. 12489053 - Interconnect structure including patterned metal lines (2025-12-02),

6. 12482742 - Enhanced linerless vias (2025-11-25),

7. 12477779 - Gate-all-around field-effect-transistor with wrap-around-channel inner spacer (2025-11-18),

8. 12476136 - Liner-less via contact (2025-11-18),

9. 12464813 - Semiconductor device having hybrid middle of line contacts (2025-11-04),

10. 12453296 - Phase-change memory device with conductive cladding (2025-10-21),

11. 12453176 - Heterogeneous gate all around dielectric thickness (2025-10-21),

12. 12453170 - Integration of nanosheets with bottom dielectric isolation and ideal diode (2025-10-21),

13. 12446232 - MRAM-based chip identification with free random programming (2025-10-14),

14. 12439672 - Semiconductor backside contact structure with increased contact area (2025-10-07),

15. 12432968 - Nanowire source/drain formation for nanosheet device (2025-09-30),

Title: The Innovative Journey of Inventor Julien Frougier

Introduction: Meet Julien Frougier, a visionary inventor based in Albany, NY (US), known for his exceptional contributions to the field of semiconductor technology. With an impressive portfolio of 140 patents, Frougier has been a driving force behind groundbreaking innovations in the industry.

Latest Patents:

1. Nanosheet Field Effect Transistor with a Source Drain Epitaxy Replacement: Frougier's latest patent showcases a semiconductor structure featuring nanosheet field-effect transistors with unique source drain epitaxy configurations, paving the way for enhanced performance in electronic devices.

2. Wrap-Around-Contact for 2D-Channel Gate-All-Around Field-Effect-Transistors: Another innovation by Frougier introduces FETs with wrap-around contacts for improved connectivity between channels and source/drain regions, revolutionizing the design of electronic components.

Career Highlights: Frougier has made significant contributions during his tenure at renowned companies such as IBM (International Business Machines Corporation) and Globalfoundries Inc., where he has played a key role in driving technological advancements in the semiconductor industry.

Collaborations: Throughout his career, Frougier has collaborated with esteemed professionals in the field, including coworkers Ruilong Xie and Kangguo Cheng. Together, they have worked on cutting-edge projects that have reshaped the landscape of semiconductor technology.

Conclusion: Julien Frougier's dedication to innovation and his relentless pursuit of excellence have solidified his position as a pioneering figure in the realm of semiconductor technology. His inventive spirit and collaborative nature continue to inspire new advancements, shaping the future of electronic devices and systems.

This text is generated by artificial intelligence and may not be accurate.