The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Sep. 15, 2022
International Business Machines Corporation, Armonk, NY (US);
Chen Zhang, Guilderland, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Heng Wu, Santa Clara, CA (US);
Min Gyu Sung, Latham, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure is presented including a backside contact of a nanosheet transistor positioned on a silicon (Si) layer of a wafer and a dielectric liner disposed between the backside contact and the Si layer such that the dielectric liner is located below via spacers of the nanosheet transistor. The backside contact is closer to a backside of the wafer than a frontside of the wafer. The dielectric liner is vertically aligned with the gate spacers and the dielectric liner is vertically aligned with inner spacers of a nanosheet stack of the nanosheet transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile