International Business Machines Corporation

Globalfoundries Inc.

Globalfoundries U.S. Inc.

Adeia Semiconductor Bonding Technologies Inc.

Adeia Semiconductor Solutions LLC

Globalfoundaries Inc.

Julien Frougier

Ruilong Xie

Kangguo Cheng

Chanro Park

Nicolas J Loubet

Daniel Chanemougame

Veeraraghavan S Basker

Heng Wu

Andrew Mark Greene

Steven J Bentley

Ali Razavieh

Min Gyu Sung

Dimitri Houssameddine

Chen Zhang

Alexander Reznicek

Juntao Li

Junli Wang

Edward J Nowak

Jingyun Zhang

Bipul C Paul

Huimei Zhou

Bruce Bennett Doris

Dechao Guo

Balasubramanian Pranatharthiharan

Pietro Montanini

Puneet Harischandra Suvarna

Hui Zang

Kisik Choi

Andreas Knorr

Steven R Soss

Nigel Graeme Cave

Lawrence Alfred Clevenger

Carl John Radens

Lars W Liebmann

Ruqiang Bao

Su Chen Fan

Ravikumar Ramachandran

Yi Qi

Miaomiao Wang

Brent A Anderson

Oleg Gluschenkov

Hiroaki Niimi

Eric R Miller

Christopher Joseph Waskiewicz

Sagarika Mukesh

Tenko Yamashita

Shogo Mochizuki

Takeshi Nogami

Wenyu Xu

Min-Hwa Chi

Roy Rongqing Yu

Siva P Adusumilli

Albert Manhee Chu

Randy W Mann

Frank Wilhelm Mont

Robin Hsin Kuo Chao

Baofu Zhu

Arkadiusz Malinowski

Keith Donegan

Chih-Chao Yang

Anthony K Stamper

Takashi Ando

Effendi Leobandung

Mukta G Farooq

Michael Rizzolo

Judson Robert Holt

Zhenxing Bi

Soon-Cheon Seo

Reinaldo Ariel Vega

Ekmini Anuja De Silva

Haiting Wang

Yann Mignot

Guillaume Bouche

Xuefeng Liu

Xusheng Kevin Wu

Anthony I Chou

Chun-Chen Yeh

Indira P Seshadri

Cheng Chi

Lan Yu

Bartlomiej Jan Pawlak

Srikanth Balaji Samavedam

Zhenyu Hu

William James Taylor, Jr

Rishikesh Krishnan

Andre P Labonte

Jay William Strane

Albert M Young

Tao Li

Daniel J Jaeger

George Robert Mulfinger

Hsien-Ching Lo

Ryan W Sporer

Ardasheir Rahman

Jia Zeng

Adra Carr

Christopher Michael Prindle

Prasad Bhosale

Hemant M Dixit

Eric Miller

A gate-all-around field effect transistor device is provided. The gate-all-around field effect transistor device includes one or more channel layers on a substrate. The gate-all-around field effect transistor device further includes an inner spacer wrapped around four sides of an end portion of each of the one or more channel layers. The gate-all-around field effect transistor device further includes a portion of an inner spacer liner between a portion of an upper most channel layer and a portion of an outer spacer.

Gate-all-around field-effect-transistor with wrap-around-channel inner spacer

An interconnect structure and a method of forming the interconnect structure are provided. The interconnect structure includes a source drain contact above and contacting a source drain region of a semiconductor device. The interconnect structure also includes a via above and contacting the source drain contact. The via includes a lower portion with an uppermost surface that contacts a lowermost surface of an interlayer dielectric.

Liner-less via contact

A CMOS (complementary metal-oxide semiconductor) device includes an n-channel metal-oxide semiconductor (NMOS) device, a p-channel metal-oxide semiconductor (PMOS) device, the NMOS and the PMOS device surrounded by a first dielectric material, the NMOS device separated from the PMOS device by a second dielectric material, a first NMOS gate separated from a first PMOS gate by the second dielectric material, a second NMOS gate electrically connected to a second PMOS gate by a metal link disposed between the NMOS gate and the PMOS gate, the metal link disposed above the second dielectric material, a first source/drain (S/D) contact disposed above the second dielectric material, the first S/D contact disposed in contact with both NMOS S/D region and a PMOS S/D region, and a second S/D contact disposed adjacent to the second dielectric material, the second S/D contact disposed in contact with a single S/D region.

Semiconductor device having hybrid middle of line contacts

A semiconductor includes a first GAA FET and second GAA FET. The second GAA FET includes a first gate dielectric and second gate dielectric within its gate structure. The first GAA FET includes just the first gate dielectric within its gate structure. The gate dielectric structure of the first GAA FET provides for a nominal or a lesser effective gate dielectric or gate dielectric resistance relative to an effective gate dielectric structure of the second GAA FET. The first GAA FET further includes a first gate conductor within its gate structure and the second GAA FET further includes the first gate conductor and a second gate conductor within its gate structure. The first gate conductor and the second gate conductor are separated by the second gate dielectric.

Heterogeneous gate all around dielectric thickness

Techniques for co-integrating gate-all-around nanosheet devices having bottom dielectric isolation with an ideal vertical P-N-P diode on a common substrate are provided. In one aspect, a semiconductor structure includes: a diode in a first region of a bulk substrate, where the diode includes P-N-P vertical implanted layers present in the bulk substrate, and a single source/drain region epitaxial material disposed on the P-N-P vertical implanted layers; and a nanosheet device with a bottom dielectric isolation layer in a second region of the bulk substrate. The nanosheet device can include nanosheet channels and gates that surround a portion of each of the nanosheet channels in a gate-all-around configuration. A method of fabricating the present semiconductor structures is also provided.

Integration of nanosheets with bottom dielectric isolation and ideal diode

A device structure for a phase-change memory device is disclosed. The device structure includes a top electrode, a phase-change material that is recessed between two layers of resistive liner material, and a conductive material. The conductive material contacts the sidewall of the top electrode, the sidewall of the phase-change material, and a portion of a top surface and a bottom surface of each of the two layers of the resistive liner material. The device structure includes a heater contacting a bottom electrode and the bottom layer of the resistive liner material. The heater is in a first bilayer dielectric. A second bilayer dielectric is under the top electrode.

Phase-change memory device with conductive cladding

A magnetoresistive random access memory (MRAM) device having chip identification using normal operating voltages is provided. No dedicated programming is needed. Instead, programming of the MRAM device is free and random and is a result of providing a magnetic via structure sufficiently close to the magnetic free layer of the magnetic junction tunnel (MTJ) structure such that the magnetic via structure projects a magnetic field that interacts with the magnetic free layer and aligns the magnetization of the magnetic free layer with the magnetization of the magnetic via structure. Thus, the orientation of the magnetization of both the magnetic via structure and the magnetic free layer are aligned in a same direction. The magnetization of the magnetic via structure can thus be used as a physical unclonable function and the MTJ structure can be used to read out this information.

MRAM-based chip identification with free random programming

A semiconductor structure having a backside contact structure with increased contact area includes a plurality of source/drain regions within a field effect transistor, each of the plurality of source/drain regions includes a top portion having an inverted V-shaped area. A backside power rail is electrically connected to at least one source/drain region through a backside metal contact. The backside metal contact wraps around a top portion of the at least one source/drain region. A tip of the top portion of the plurality of source/drain regions points towards the backside power rail with the top portion of the at least one source/drain region being in electric contact with the backside metal contact. A first epitaxial layer is in contact with a top portion of at least another source/drain region adjacent to the at least one source/drain region for electrically isolating the at least another source/drain region from the backside power rail.

Semiconductor backside contact structure with increased contact area

A method including forming a plurality of nanosheets on a substrate and forming a plurality of sacrificial layers on the substrate, wherein the plurality of nanosheets and the plurality of sacrificial layers are arranged as alternating layers. Forming and patterning a first hardmask located on top of one of the sacrificial layers and forming a second hardmask around the first hardmask. Patterning the plurality of nanosheets and the plurality of sacrificial layers. Forming and patterning a dummy gate located on top of first hard mask. Removing the plurality of sacrificial layers. Forming a plurality of nanowires, where the plurality of nanowires is formed by the removal of the plurality of sacrificial layers, where the removal of the plurality of sacrificial layers thins sections of each of the plurality of nanowires forming the plurality of nanowires.

Nanowire source/drain formation for nanosheet device

A buried power rail contact structure is provided that wraps around a source/drain region of a first field effect transistor (FET), contacts a surface of a buried power rail, and has a reduced height as compared to a height of a neighboring source/drain contact structure that contacts a surface of a source/drain region of a second FET. Both the buried power rail contact structure and the source/drain contact structure have a negative taper, i.e., each of the buried power rail contact structure and the source/drain contact structure has outermost sidewalls that slope outward from a topmost surface of the contact structure to a bottommost surface of the contact structure. Such contact structures reduce the parasitic capacitance between a functional gate structure and the contact structure.

Buried power rail with robust connection to a wrap around contact

Semiconductor channel layers vertically aligned and stacked one on top of another, each separated by a gate stack material, a source-drain epitaxy region adjacent to the semiconductor channel layers, a vertical side surface of the source-drain epitaxy region is adjacent to a vertical side surface of a conductive trench contact. A first set and a second set of semiconductor channel layers, a conductive trench contact between them and a source-drain between the first set and the conductive trench contact. Forming a first stack, a second stack and a third stack of nanosheet layers, forming a first, second and third sacrificial gate, forming a first source drain between the first and second stack, forming a second source drain between the second and third, forming a vertical trench in the first source drain while protecting the second source drain, and forming a stressor material layer in the vertical trench.

Strain generation and anchoring in gate-all-around field effect transistors

A semiconductor structure includes a backside contact, and an unmerged source/drain region. The backside contact is wrapped-around the unmerged source/drain region.

Semiconductor structure with wrapped-around backside contact

Embodiments of the present invention are directed to processing methods and resulting structures for co-integrating gate-all-around (GAA) nanosheets and comb-nanosheets on the same chip, wafer, or substrate. In a non-limiting embodiment of the invention, a GAA nanosheet device is formed in a first region of a substrate. The GAA nanosheet device includes a first nanosheet stack, a second nanosheet stack, and a first fin spacing distance between the first nanosheet stack and the second nanosheet stack. A comb-nanosheet device is formed in a second region of a substrate. The comb-nanosheet device includes a third nanosheet stack, a fourth nanosheet stack, and a second fin spacing distance between the third nanosheet stack and the fourth nanosheet stack that is less than the first fin spacing distance.

Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transistors

A microelectronic structure including a stacked transistor having a lower transistor and an upper transistor. A shared contact in contact with a lower source/drain of the first lower transistor and an upper source/drain of the upper transistor. The shared contact includes a silicide layer, a metal plug layer, and a conductive metal layer.

Method and structure of forming sidewall contact for stacked FET

A semiconductor device is provided. The semiconductor device includes a field effect transistor (FET) including first and second source/drain (S/D) epitaxial regions. The semiconductor device also includes a gate cut region at cell boundaries between the first and second S/D epitaxial regions, a dielectric liner and a dielectric core formed in the gate cut region, and a backside power rail (BPR) and a backside power distribution network (BSPDN). The semiconductor device also includes a power via passing through the dielectric core and connecting to the BPR and BSPDN, first metal contacts formed in contact with the first and second S/D epitaxial regions, and a via to backside power rail (VBPR) contact. The dielectric liner separates the power via from the first S/D epitaxial region.

Semiconductor device with power via

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Albany, NY, United States of America

Julien Frougier