The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Dec. 15, 2021
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Nicolas Loubet, Guilderland, NY (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
Prasad Bhosale, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a first gate stack disposed over an active region and a second gate stack disposed over a shallow trench isolation (STI) region such that the first gate stack is taller than the second gate stack. The second gate stack includes a plurality of gates formed over a non-active region. The nanosheet stacks in the active region include first inner spacers and second inner spacers. The first inner spacers are vertically aligned with the second inner spacers. Further, the first inner spacers directly contact lower sidewalls of a source/drain epitaxial region to isolate the second gate stack from the STI region.