The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Mar. 29, 2024
International Business Machines Corporation, Armonk, NY (US);
Min Gyu Sung, Latham, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Chanro Park, Clifton Park, NY (US);
Juntao Li, Cohoes, NY (US);
Soon-Cheon Seo, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure includes a selection transistor having a first drain-source terminal, a second drain-source terminal, at least one channel region between the first and second source-drain terminals, and a gate adjacent the at least one channel region. A first vertical contact structure is connected to the first drain-source terminal. A second vertical contact structure is connected to the second drain-source terminal. A first resistive memory cell has a lower electrode coupled to the second vertical contact structure and has an upper electrode. A third vertical contact structure is connected to the upper electrode of the first resistive memory cell. A second resistive memory cell has an upper electrode coupled to the second vertical contact structure and has a lower electrode. A fourth vertical contact structure is connected to the lower electrode of the second resistive memory cell.