The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Oct. 18, 2022
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Juntao Li, Cohoes, NY (US);
Arthur Roy Gasasira, Halfmoon, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Min Gyu Sung, Latham, NY (US);
Chanro Park, Clifton Park, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Embodiments of present invention provide a method of forming a phase change memory device. The method includes forming a bottom electrode on a supporting structure; forming a first blanket dielectric layer, a phase-change material layer, a second blanket dielectric layer, and a hard mask sequentially on top of the bottom electrode; forming an inner spacer in an opening in the hard mask to modify the opening; extending the opening into the second blanket dielectric layer to create an extended opening; filling the extended opening with a heating element; etching the second blanket dielectric layer, the phase-change material layer, and the first blanket dielectric layer respectively into a second dielectric layer, a phase-change element, and a first dielectric layer; forming a conductive liner surrounding the phase-change element; and forming a top electrode on top of the heating element. A structure formed thereby is also provided.