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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12740388 B1

PDFFull Text
Date of Patent:
Sep. 15, 2026

Filed:

Jun. 16, 2023

Transistors with bottom dielectric isolation and fully self-aligned direct backside contact

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nicolas Jean Loubet, Guilderland, NY (US);

Shogo Mochizuki, Mechanicville, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Julien Frougier, Albany, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

Samuel A. Waldbaum

Primary Examiner:

Jonathan Han

Int. Cl.
CPC ...
H10W 20/20 (2026.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10W 20/20 (2026.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/0128 (2025.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

A microelectronic device including a nanosheet transistor that includes a first source/drain and a second source/drain. A frontside contact connected to the first source/drain and a backside contact connected to the second source/drain. A plurality of isolation layers located beneath the nanosheet transistor, and the second source/drain extends through the plurality of isolation layers to connect with the backside contact.

Find Patent Forward Citations

Loubet, Nicolas. (2026). Transistors with bottom dielectric isolation and fully self-aligned direct backside contact (U.S. Patent No. 12740388). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12740388

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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