The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Dec. 08, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Nicolas Loubet, Guilderland, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Chanro Park, Clifton Park, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 23/5226 (2013.01); H01L 21/76804 (2013.01); H01L 21/76843 (2013.01);
Abstract
An interconnect structure and a method of forming the interconnect structure are provided. The interconnect structure includes a source drain contact above and contacting a source drain region of a semiconductor device. The interconnect structure also includes a via above and contacting the source drain contact. The via includes a lower portion with an uppermost surface that contacts a lowermost surface of an interlayer dielectric.