The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Mar. 23, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Shogo Mochizuki, Mechanicville, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Juntao Li, Cohoes, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/00 (2025.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H01L 21/762 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6757 (2025.01); H10D 62/115 (2025.01); H10D 62/118 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/0147 (2025.01); H10D 84/038 (2025.01);
Abstract
A semiconductor structure includes a substrate disposed in a horizontal plane, a gate metal on the substrate, a first spacer and a second spacer on the substrate with the gate metal between the first spacer and the second spacer, and a plurality of horizontally stacked nanosheets extending between the first spacer and the second spacer, with the gate metal encapsulating the plurality of horizontally stacked nanosheets between the first spacer and the second spacer.