The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
May. 25, 2021
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Dimitri Houssameddine, Sunnyvale, CA (US);
Julien Frougier, Albany, NY (US);
Ruilong Xie, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A magnetoresistive random access memory (MRAM) device having chip identification using normal operating voltages is provided. No dedicated programming is needed. Instead, programming of the MRAM device is free and random and is a result of providing a magnetic via structure sufficiently close to the magnetic free layer of the magnetic junction tunnel (MTJ) structure such that the magnetic via structure projects a magnetic field that interacts with the magnetic free layer and aligns the magnetization of the magnetic free layer with the magnetization of the magnetic via structure. Thus, the orientation of the magnetization of both the magnetic via structure and the magnetic free layer are aligned in a same direction. The magnetization of the magnetic via structure can thus be used as a physical unclonable function and the MTJ structure can be used to read out this information.