The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Dec. 19, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chen Zhang, Albany, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Wenyu Xu, Albany, NY (US);

Fee Li Lie, Albany, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/63 (2025.01); H10D 30/67 (2025.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H10D 84/834 (2025.01); H10D 30/024 (2025.01); H10D 30/025 (2025.01); H10D 30/62 (2025.01); H10D 30/63 (2025.01); H10D 30/6735 (2025.01); H10D 88/00 (2025.01);
Abstract

Techniques regarding anchors for fins comprised within stacked VTFET devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can further comprise a fin extending from a semiconductor body. The fin can be comprised within a stacked vertical transport field effect transistor device. The apparatus can also comprise a dielectric anchor extending from the semiconductor body and adjacent to the fin. Further, the dielectric anchor can be coupled to the fin.


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