The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Jan. 13, 2023
Applicant:

Adeia Semiconductor Solutions Llc, San Jose, CA (US);

Inventor:

Kangguo Cheng, Schenectady, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 21/265 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/426 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 48/30 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 86/00 (2025.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); H01L 21/0337 (2013.01); H01L 21/26506 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 21/31138 (2013.01); H01L 21/32105 (2013.01); H01L 21/426 (2013.01); H10D 30/024 (2025.01); H10D 30/0245 (2025.01); H10D 30/6211 (2025.01); H10D 30/67 (2025.01); H10D 48/30 (2025.01); H10D 84/0147 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01); H10D 86/215 (2025.01); H10B 10/12 (2023.02);
Abstract

A method of fabricating semiconductor fins, including, patterning a film stack to produce one or more sacrificial mandrels having sidewalls, exposing the sidewall on one side of the one or more sacrificial mandrels to an ion beam to make the exposed sidewall more susceptible to oxidation, oxidizing the opposite sidewalls of the one or more sacrificial mandrels to form a plurality of oxide pillars, removing the one or more sacrificial mandrels, forming spacers on opposite sides of each of the plurality of oxide pillars to produce a spacer pattern, removing the plurality of oxide pillars, and transferring the spacer pattern to the substrate to produce a plurality of fins.


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