The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Mar. 12, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jingyun Zhang, Albany, NY (US);

Choonghyun Lee, Rensselaer, NY (US);

Chun Wing Yeung, Niskayuna, NY (US);

Robin Hsin Kuo Chao, Cohoes, NY (US);

Heng Wu, Guilderland, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66522 (2013.01); H01L 21/02532 (2013.01); H01L 21/02546 (2013.01); H01L 21/02609 (2013.01); H01L 21/3065 (2013.01); H01L 29/42392 (2013.01); H01L 29/6653 (2013.01); H01L 29/66469 (2013.01); H01L 29/78696 (2013.01); H01L 29/66545 (2013.01);
Abstract

Semiconductor devices and methods of forming the same include forming a stack of alternating first and second sacrificial layers. The first sacrificial layers are recessed relative to the second sacrificial layers. Replacement channel layers are grown from sidewalls of the first sacrificial layers. A first source/drain region is grown from the replacement channel layer. The recessed first sacrificial layers are etched away. A second source/drain region is grown from the replacement channel layer. The second sacrificial layers are etched away. A gate stack is formed between and around the replacement channel layers.


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